Custom design of optical-grade thin films of silicon oxide by direct-write electron-beam-induced deposition

Author(s):  
Heinz D. Wanzenboeck ◽  
Markus Fischer ◽  
Robert Svagera ◽  
Johann Wernisch ◽  
Emmerich Bertagnolli
2018 ◽  
Vol 9 ◽  
pp. 2581-2598 ◽  
Author(s):  
Lukas Keller ◽  
Michael Huth

Fabrication of three-dimensional (3D) nanoarchitectures by focused electron beam induced deposition (FEBID) has matured to a level that highly complex and functional deposits are becoming available for nanomagnetics and plasmonics. However, the generation of suitable pattern files that control the electron beam’s movement, and thereby reliably map the desired target 3D structure from a purely geometrical description to a shape-conforming 3D deposit, is nontrivial. To address this issue we developed several writing strategies and associated algorithms implemented in C++. Our pattern file generator handles different proximity effects and corrects for height-dependent precursor coverage. Several examples of successful 3D nanoarchitectures using different precursors are presented that validate the effectiveness of the implementation.


2003 ◽  
Vol 784 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  

ABSTRACTWe demonstrate submicron ferroelectric domain engineering in liquid phase epitaxy (LPE) LiNbO3 thin films grown on LiNbO3 and LiTaO3 substrates using a direct-write electron beam poling for waveguide applications. LiNbO3 thin films of several-micron thickness were grown using a flux melt of 20 mol% LiNbO3-80 mol% LiVO3. To engineer domain structures in Z- oriented LPE LiNbO3 films, a direct-write electron beam poling was implemented. It is shown that we can engineer the domain structure of LPE LiNbO3 films by using direct e-beam poling, even though the domain orientations of the film and the substrate are opposite. We also compared e-beam poling behavior in a congruent LiNbO3 single crystal and a LPE LiNbO3 film. Using the same e-beam scan parameters, a much enhanced domain structure is obtained in LPE films. Defect structure and composition effects are also discussed.


2013 ◽  
Vol 4 ◽  
pp. 77-86 ◽  
Author(s):  
Xiaoxing Ke ◽  
Carla Bittencourt ◽  
Sara Bals ◽  
Gustaaf Van Tendeloo

Focused-electron-beam-induced deposition (FEBID) is used as a direct-write approach to decorate ultrasmall Pt nanoclusters on carbon nanotubes at selected sites in a straightforward maskless manner. The as-deposited nanostructures are studied by transmission electron microscopy (TEM) in 2D and 3D, demonstrating that the Pt nanoclusters are well-dispersed, covering the selected areas of the CNT surface completely. The ability of FEBID to graft nanoclusters on multiple sides, through an electron-transparent target within one step, is unique as a physical deposition method. Using high-resolution TEM we have shown that the CNT structure can be well preserved thanks to the low dose used in FEBID. By tuning the electron-beam parameters, the density and distribution of the nanoclusters can be controlled. The purity of as-deposited nanoclusters can be improved by low-energy electron irradiation at room temperature.


Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 8
Author(s):  
Sangeetha Hari ◽  
P. H. F. Trompenaars ◽  
J. J. L. Mulders ◽  
Pieter Kruit ◽  
C. W. Hagen

High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between the lines as a result of the Gaussian line profile. We demonstrate the use of focused electron beam-induced etching (FEBIE) as a scanning electron microscope (SEM)-based direct-write technique for the removal of this interconnecting material, which can be implemented without removing the sample from the SEM for post processing. Secondary electron (SE) imaging has been used to monitor the FEBIE process, and atomic force microscopy (AFM) measurements confirm the fabrication of well separated FEBID lines. We further demonstrate the application of this technique for removing interconnecting material in high resolution dense lines using backscattered electron (BSE) imaging to monitor the process.


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