Surface roughness exacerbated performance degradation in silicon nanowire transistors

2006 ◽  
Vol 24 (5) ◽  
pp. 2424 ◽  
Author(s):  
D. Basu ◽  
M. J. Gilbert ◽  
S. K. Banerjee
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowire ◽  
Performance Degradation ◽  
Nanowire Transistors

scholarly journals Theoretical investigation of surface roughness scattering in silicon nanowire transistors

2005 ◽  
Vol 87 (4) ◽  
pp. 043101 ◽  
Author(s):  
Jing Wang ◽  
Eric Polizzi ◽  
Avik Ghosh ◽  
Supriyo Datta ◽  
Mark Lundstrom
Keyword(s):  
Surface Roughness ◽  
Theoretical Investigation ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Surface Roughness Scattering

scholarly journals Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5716
Author(s):  
Siti Noorhaniah Yusoh ◽  
Khatijah Aisha Yaacob
Keyword(s):  
Surface Roughness ◽  
Physical Properties ◽  
Limit Of Detection ◽  
Silicon Nanowire ◽  
Volume Ratio ◽  
Silicon Nanowire Arrays ◽  
Atomic Force ◽  
Local Anodic Oxidation ◽  
Wet Chemical ◽  
Biosensor Device

SiNW (silicon nanowire) arrays consisting of 5- and 10-wires were fabricated by using an atomic force microscope—the local anodic oxidation (AFM-LAO) technique followed by wet chemical etching. Tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) at various concentrations were used to etch SiNWs. The SiNWs produced were differed in dimension and surface roughness. The SiNWs were functionalized and used for the detection of deoxyribonucleic acid (DNA) dengue (DEN-1). SiNW-based biosensors show sensitive detection of dengue DNA due to certain factors. The physical properties of SiNWs, such as the number of wires, the dimensions of wires, and surface roughness, were found to influence the sensitivity of the biosensor device. The SiNW biosensor device with 10 wires, a larger surface-to-volume ratio, and a rough surface is the most sensitive device, with a 1.93 fM limit of detection (LOD).

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

scholarly journals Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 124 ◽  
Author(s):  
Toufik Sadi ◽  
Cristina Medina-Bailon ◽  
Mihail Nedjalkov ◽  
Jaehyun Lee ◽  
Oves Badami ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Small Diameter ◽  
Golden Rule ◽  
Impurity Scattering ◽  
Boltzmann Transport ◽  
Nanowire Transistors ◽  
Scattering Mechanisms ◽  
Relaxation Time Approximation ◽  
Ionized Impurity Scattering ◽  
The Impact

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ physics and operation, and unlock the devices’ technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo–Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi’s Golden rule. In this paper, we couple multi-slice Poisson–Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes.

Influence of discrete dopant on quantum transport in silicon nanowire transistors

2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors
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