Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

2009 ◽  
Vol 80 (15) ◽  
Author(s):  
Mathieu Luisier ◽  
Gerhard Klimeck
Keyword(s):  
Phonon Scattering ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Full Band ◽  
Electron Phonon Scattering

An accelerated algorithm for full band electron–phonon scattering rate computation

2014 ◽  
Vol 185 (12) ◽  
pp. 3392-3397 ◽  
Author(s):  
Yanbiao Chu ◽  
Pierre Gautreau ◽  
Tarek Ragab ◽  
Cemal Basaran
Keyword(s):  
Phonon Scattering ◽  
Band Electron ◽  
Scattering Rate ◽  
Full Band ◽  
Electron Phonon Scattering

Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors

2016 ◽  
Vol 122 ◽  
pp. 1-7 ◽  
Author(s):  
M. Bescond ◽  
H. Carrillo-Nuñez ◽  
S. Berrada ◽  
N. Cavassilas ◽  
M. Lannoo
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
Nanowire Transistors ◽  
Electron Phonon Scattering

Full-band study of current across silicon nanowire transistors

2007 ◽  
Vol 90 (13) ◽  
pp. 132112 ◽  
Author(s):  
K. Nehari ◽  
N. Cavassilas ◽  
F. Michelini ◽  
M. Bescond ◽  
J. L. Autran ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Full Band

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

scholarly journals When band convergence is not beneficial for thermoelectrics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Junsoo Park ◽  
Maxwell Dylla ◽  
Yi Xia ◽  
Max Wood ◽  
G. Jeffrey Snyder ◽  
...  
Keyword(s):  
Charge Carrier ◽  
First Principles ◽  
Design Principle ◽  
Phonon Scattering ◽  
Charge Carrier Concentration ◽  
Deformation Potential ◽  
Interband Scattering ◽  
Improved Performance ◽  
Full Heusler ◽  
Electron Phonon Scattering

AbstractBand convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

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