Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect
2000 ◽
Vol 47
(10)
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pp. 1965-1972
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Keyword(s):
Keyword(s):
2014 ◽
Vol 140
(16)
◽
pp. 164708
◽
Keyword(s):
Keyword(s):
1993 ◽
pp. 361-364
Keyword(s):
Keyword(s):
1995 ◽
Vol 34
(Part 1, No. 7A)
◽
pp. 3612-3618
◽
1990 ◽
Vol 11
(10)
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pp. 1695-1727
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