Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect

2000 ◽  
Vol 47 (10) ◽  
pp. 1965-1972 ◽  
Author(s):  
Y. Ando ◽  
W. Contrata ◽  
N. Samoto ◽  
H. Miyamoto ◽  
K. Matsunaga ◽  
...  
1995 ◽  
Vol 34 (Part 1, No. 7A) ◽  
pp. 3612-3618 ◽  
Author(s):  
Yasushi Sasajima ◽  
Takahiro Ohtsuka ◽  
Katsumi Adachi ◽  
Minoru Ichimura ◽  
Satoru Ozawa

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