Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains

2001 ◽  
Vol 19 (3) ◽  
pp. 1051 ◽  
Author(s):  
Chiharu Kimura ◽  
Tomohide Yamamoto ◽  
Takashi Sugino
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Cubic Boron Nitride ◽  
Emission Characteristics ◽  
Si Substrates ◽  
Crystal Grains ◽  
Boron Nitride Films

Field emission characteristics of boron nitride films

2000 ◽  
Vol 18 (2) ◽  
pp. 1089 ◽  
Author(s):  
Takashi Sugino ◽  
Yoshihiro Etou ◽  
Shigeru Tagawa ◽  
Mikka Nishitani Gamo ◽  
Toshihiro Ando
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Emission Characteristics ◽  
Boron Nitride Films

Preferentially Oriented Cubic Boron Nitride Films Grown on Si (001) Substrates by Ion Assisted Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-riba ◽  
G. L. Doll ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTPreferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.

Field emission mechanism from nanocrystalline cubic boron nitride films

2004 ◽  
Vol 35 (4) ◽  
pp. 371-374 ◽  
Author(s):  
B. Wang ◽  
R.Z. Wang ◽  
H. Zhou ◽  
X.H. Yan ◽  
J.X. Cao ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Cubic Boron Nitride ◽  
Emission Mechanism ◽  
Boron Nitride Films

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

scholarly journals Preparation of cubic boron nitride films by radio frequency sputtering

2006 ◽  
Vol 55 (10) ◽  
pp. 5441
Author(s):  
Tian Ling ◽  
Ding Yi ◽  
Chen Hao ◽  
Liu Jun-Kai ◽  
Deng Jin-Xiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Sputtering ◽  
Boron Nitride Films
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