Asymmetry of aerial image after mask pattern correction for off-axis incident light in extreme ultraviolet lithography

2005 ◽  
Vol 23 (6) ◽  
pp. 2870 ◽  
Author(s):  
Minoru Sugawara ◽  
Iwao Nishiyama ◽  
Mikio Takai
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Aerial Image ◽  
Extreme Ultraviolet Lithography ◽  
Mask Pattern ◽  
Ultraviolet Lithography

Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features

2010 ◽  
Author(s):  
Grant M. Kloster ◽  
Ted Liang ◽  
Todd R. Younkin ◽  
Ernisse S. Putna ◽  
Roman Caudillo ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Mask Pattern ◽  
Ultraviolet Lithography

scholarly journals Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Andreas Erdmann ◽  
Dongbo Xu ◽  
Peter Evanschitzky ◽  
Vicky Philipsen ◽  
Vu Luong ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Extreme Ultraviolet Lithography ◽  
Imaging Analysis ◽  
Partial Reflection ◽  
Ultraviolet Lithography ◽  
Euv Lithography ◽  
Imaging Artifacts ◽  
Lithographic Masks ◽  
Reflective Systems

AbstractThe reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the mask causes asymmetric shadowing, a size bias between features with different orientations and telecentricity errors. The image contrast varies with the feature orientation and can easily drop far below intuitively expected values. The deformation of the wavefront or phase of the incident light by thick absorbers generates aberration-like effects, especially variations of the best-focus (BF) position vs. the pitch and size of the imaged patterns. Partial reflection of light from the top of the absorber generates a weak secondary image, which superposes with the main image. Based on a discussion of the root causes of these phenomena, we employ mask diffraction and imaging analysis for a quantitative analysis of these effects for standard EUV masks. Simulations for various non-standard types of mask stacks (e.g. etched multilayers, buried shifters, etc.) and for various non-standard absorber materials are used to explore the imaging capabilities of alternative masks for EUV lithography. Finally, an outlook at anamorphic systems for larger numerical apertures is given.

Measurement of mid-spatial-frequency scatter in extreme ultraviolet lithography systems using direct aerial image measurements

1997 ◽  
Author(s):  
Charles H. Fields ◽  
Avijit K. Ray-Chaudhuri ◽  
Kevin D. Krenz ◽  
William G. Oldham ◽  
Richard H. Stulen
Keyword(s):  
Spatial Frequency ◽  
Extreme Ultraviolet ◽  
Aerial Image ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography

Aerial Image Mask Inspection System for Extreme Ultraviolet Lithography

2007 ◽  
Vol 46 (9B) ◽  
pp. 6113-6117 ◽  
Author(s):  
Hiroo Kinoshita ◽  
Kazuhiro Hamamoto ◽  
Nobuyuki Sakaya ◽  
Morio Hosoya ◽  
Takeo Watanabe
Keyword(s):  
Extreme Ultraviolet ◽  
Aerial Image ◽  
Inspection System ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Mask Inspection ◽  
Image Mask
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