Pattern printability for off-axis incident light in extreme ultraviolet lithography

2003 ◽  
Vol 2 (1) ◽  
pp. 27 ◽  
Author(s):  
Minoru Sugawara
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography

scholarly journals Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Andreas Erdmann ◽  
Dongbo Xu ◽  
Peter Evanschitzky ◽  
Vicky Philipsen ◽  
Vu Luong ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Extreme Ultraviolet Lithography ◽  
Imaging Analysis ◽  
Partial Reflection ◽  
Ultraviolet Lithography ◽  
Euv Lithography ◽  
Imaging Artifacts ◽  
Lithographic Masks ◽  
Reflective Systems

AbstractThe reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the mask causes asymmetric shadowing, a size bias between features with different orientations and telecentricity errors. The image contrast varies with the feature orientation and can easily drop far below intuitively expected values. The deformation of the wavefront or phase of the incident light by thick absorbers generates aberration-like effects, especially variations of the best-focus (BF) position vs. the pitch and size of the imaged patterns. Partial reflection of light from the top of the absorber generates a weak secondary image, which superposes with the main image. Based on a discussion of the root causes of these phenomena, we employ mask diffraction and imaging analysis for a quantitative analysis of these effects for standard EUV masks. Simulations for various non-standard types of mask stacks (e.g. etched multilayers, buried shifters, etc.) and for various non-standard absorber materials are used to explore the imaging capabilities of alternative masks for EUV lithography. Finally, an outlook at anamorphic systems for larger numerical apertures is given.

Backbone Degradable Poly(aryl acetal) Photoresist Polymers: Synthesis, Acid Sensitivity, and Extreme Ultraviolet Lithography Performance

2019 ◽  
Vol 52 (3) ◽  
pp. 886-895 ◽  
Author(s):  
Matthias S. Ober ◽  
Duane R. Romer ◽  
John Etienne ◽  
P. J. Thomas ◽  
Vipul Jain ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Acid Sensitivity

Demonstration of phase-shift masks for extreme-ultraviolet lithography

2006 ◽  
Author(s):  
Bruno La Fontaine ◽  
Adam R. Pawloski ◽  
Obert Wood ◽  
Yunfei Deng ◽  
Harry J. Levinson ◽  
...  
Keyword(s):  
Phase Shift ◽  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography

Influence of MEEF change on the mask shadowing effect in extreme ultraviolet lithography

2010 ◽  
Vol 87 (11) ◽  
pp. 2134-2138 ◽  
Author(s):  
Chang Young Jeong ◽  
Sangsul Lee ◽  
Hyun-Duck Shin ◽  
Tae Geun Kim ◽  
Jinho Ahn
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Shadowing Effect

Laser Shock Removal of Nanoparticles from Si Capping Layer of Extreme Ultraviolet Lithography Masks

2005 ◽  
Vol 44 (7B) ◽  
pp. 5560-5564 ◽  
Author(s):  
Sang-Ho Lee ◽  
Young-Jae Kang ◽  
Jin-Goo Park ◽  
Ahmed A. Busnaina ◽  
Jong-Myung Lee ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Laser Shock ◽  
Ultraviolet Lithography ◽  
Capping Layer
Sign in / Sign up

Export Citation Format

Share Document