scholarly journals Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

2005 ◽  
Vol 23 (4) ◽  
pp. 1706 ◽  
Author(s):  
Taketomo Sato ◽  
Isao Tamai ◽  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Theoretical Modeling ◽  
Gaas Nanowires

scholarly journals Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

2019 ◽  
Vol 1 (11) ◽  
pp. 4433-4441 ◽  
Author(s):  
Marco Vettori ◽  
Alexandre Danescu ◽  
Xin Guan ◽  
Philippe Regreny ◽  
José Penuelas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Significant Role ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Incidence Angle ◽  
Group Iii ◽  
Element Fluxes ◽  
Gaas Nanowires ◽  
Diffusion Controlled ◽  
Kinetics Of

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of self-assisted III–V nanowires by molecular beam epitaxy.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency
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