Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)

2005 ◽  
Vol 23 (4) ◽  
pp. 1741 ◽  
Author(s):  
Y. Sakuma ◽  
M. Takeguchi ◽  
K. Takemoto ◽  
S. Hirose ◽  
T. Usuki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Exchange Reaction ◽  
Anion Exchange ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Cap Layer ◽  
Anion Exchange Reaction

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

2002 ◽  
Vol 81 (7) ◽  
pp. 1195-1197 ◽  
Author(s):  
Fariba Ferdos ◽  
Shumin Wang ◽  
Yongqiang Wei ◽  
Anders Larsson ◽  
Mahdad Sadeghi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Cap Layer

Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

2003 ◽  
Vol 94 (10) ◽  
pp. 6603-6606 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Matrix effects on the structural and optical properties of InAs quantum dots

2001 ◽  
Vol 79 (22) ◽  
pp. 3681-3683 ◽  
Author(s):  
J. X. Chen ◽  
U. Oesterle ◽  
A. Fiore ◽  
R. P. Stanley ◽  
M. Ilegems ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Matrix Effects ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

scholarly journals Formation of uniform PbS quantum dots by a spin-assisted successive precipitation and anion exchange reaction process using PbX2 (X = Br, I) and Na2S precursors

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3072-3077 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyeok Jang ◽  
Min Ho Lee ◽  
Myoung Sang You ◽  
Sang-Wook Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Exchange Reaction ◽  
Anion Exchange ◽  
Reaction Process ◽  
Pbs Quantum Dots ◽  
Anion Exchange Reaction

We devised a straightforward spin-assisted successive precipitation and anion exchange reaction (spin-SPAER) process in order to deposit relatively uniform PbS quantum dots (QDs) on mesoporous TiO2 (mp-TiO2).

Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

2007 ◽  
Vol 300 (2) ◽  
pp. 319-323 ◽  
Author(s):  
Ho Jin Park ◽  
Jong Ho Kim ◽  
J.J. Yoon ◽  
J.S. Son ◽  
D.Y. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Annealing Effects

Structural and optical properties of shape-engineered InAs quantum dots

2003 ◽  
Vol 94 (4) ◽  
pp. 2486-2490 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Indium Composition ◽  
Cap Layer ◽  
Self Assembled ◽  
The Impact

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

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