Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

2002 ◽  
Vol 81 (7) ◽  
pp. 1195-1197 ◽  
Author(s):  
Fariba Ferdos ◽  
Shumin Wang ◽  
Yongqiang Wei ◽  
Anders Larsson ◽  
Mahdad Sadeghi ◽  
...  
2003 ◽  
Vol 94 (10) ◽  
pp. 6603-6606 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  

2001 ◽  
Vol 79 (22) ◽  
pp. 3681-3683 ◽  
Author(s):  
J. X. Chen ◽  
U. Oesterle ◽  
A. Fiore ◽  
R. P. Stanley ◽  
M. Ilegems ◽  
...  

2007 ◽  
Vol 300 (2) ◽  
pp. 319-323 ◽  
Author(s):  
Ho Jin Park ◽  
Jong Ho Kim ◽  
J.J. Yoon ◽  
J.S. Son ◽  
D.Y. Lee ◽  
...  

2003 ◽  
Vol 94 (4) ◽  
pp. 2486-2490 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.


2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  

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