Evaluation of silicon oxide cleaning using F2∕Ar remote plasma processing

2005 ◽  
Vol 23 (4) ◽  
pp. 911-916 ◽  
Author(s):  
S. C. Kang ◽  
J. Y. Hwang ◽  
N.-E. Lee ◽  
K. S. Joo ◽  
G. H. Bae
Keyword(s):  
Silicon Oxide ◽  
Plasma Processing ◽  
Remote Plasma

scholarly journals Low temperature silicon oxide deposition on polymer powders in a fluidized bed coupled to a cold remote plasma

2012 ◽  
Vol 206 (23) ◽  
pp. 4814-4821 ◽  
Author(s):  
H. Caquineau ◽  
L. Aiche ◽  
H. Vergnes ◽  
B. Despax ◽  
B. Caussat
Keyword(s):  
Low Temperature ◽  
Fluidized Bed ◽  
Silicon Oxide ◽  
Remote Plasma ◽  
Oxide Deposition ◽  
Polymer Powders

H2 and N2 Remote Plasma Processing of Wurtzite-Like Oxides: Implications for Energy Applications

2015 ◽  
Vol 13 (1) ◽  
pp. 147-160 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Giuseppe V. Bianco ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Maria Losurdo
Keyword(s):  
Plasma Processing ◽  
Remote Plasma ◽  
Energy Applications

Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing

1998 ◽  
Vol 83 (12) ◽  
pp. 7635-7639 ◽  
Author(s):  
Bradley C. Smith ◽  
H. Henry Lamb
Keyword(s):  
Plasma Processing ◽  
Silicon Oxynitride ◽  
Remote Plasma

scholarly journals Analysis of the Plasma Recycling Process of Radioactive Waste

2019 ◽  
pp. 23-29
Author(s):  
M. Semerak ◽  
S. Lys ◽  
T. Kovalenko
Keyword(s):  
Radioactive Waste ◽  
Silicon Oxide ◽  
Raw Materials ◽  
Shaft Furnace ◽  
Plasma Heating ◽  
Plasma Processing ◽  
Radioactive Wastes ◽  
Heating Source ◽  
Long Term Storage ◽  
Plasmochemical Reactor

The possibility of the plasma processing of low-level or intermediatelevel radioactive wastes in the reactor equipped with arc plasmatrons is shown. The reactor design for the plasma processing of the radioactive wastes that allows promoting the efficiency of the plasma processing of the radioactive wastes (RAW) by the increasing of the speed and the intensity of the plasma pyrolysis is proposed. The various methods for RAW preparation, dosage and supply into the plasmochemical reactor have been investigated. The waste which is supplied to the reactor can be in various aggregate states (solid, liquid or gaseous) depending on which different kinds of preparation, dosage, and supply of RAW materials to the plasmochemical reactor are used. The solid waste must be ground for increasing of the phase separation surface. The degree of grinding of the wastes depends on their further reprocessing. The reactor allows processing of the mixed-type radioactive waste, which includes both combustible and non-combustible components. The wastes can be packed or ground up. The selected technological regimes should provide temperature from 1500 °C in the melting chamber to 250 °C in the upper part in the pyrogas exit zone to prevent the flow-out of volatile compounds of a series of radionuclides and heavy metals from the furnace and to process the waste and merge slag melt without adding of fluxes. The fused slag is a basaltiform monolith, where the content of aluminum oxide reaches 28%; silicon oxide up to 56%; sodium oxide from 2.5 to 11 %. The resulting radioactive slag is extremely resistant to the chemical influence. The pyrogas produced in the shaft furnace will have a heating value of about 5 MJ/nm3. This allows, after initial heating by plasmatron, maintaining the required temperature in the combustion chamber due to the heat released during combustion of the pyrogas, when the plasma heating source is switched off, and burning the resin and soot effectively. It is proved that the plasma technology for RAW reprocessing allows a significant reduction in waste volumes and waste placement for long-term storage with the most efficient use of storage facilities.

Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source

2019 ◽  
Vol 21 (6) ◽  
pp. 064007
Author(s):  
H J YEOM ◽  
D H CHOI ◽  
Y S LEE ◽  
J H KIM ◽  
D J SEONG ◽  
...  
Keyword(s):  
Plasma Density ◽  
Silicon Oxide ◽  
Density Measurement ◽  
Plasma Source ◽  
Remote Plasma

Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing

2005 ◽  
Vol 193 (1-3) ◽  
pp. 350-355 ◽  
Author(s):  
S.C. Kang ◽  
C.H. Oh ◽  
N.-E. Lee ◽  
T.K. Kwon
Keyword(s):  
Plasma Processing ◽  
Remote Plasma

Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1-(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
D. Wolfe ◽  
K. Flock ◽  
R. Therrien ◽  
R. Johnson ◽  
B. Rayner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Remote Plasma ◽  
Before And After ◽  
Oxidized Zirconium ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTA remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.

Device-quality GaN–dielectric interfaces by 300°C remote plasma processing

2003 ◽  
Vol 216 (1-4) ◽  
pp. 119-123 ◽  
Author(s):  
C Bae ◽  
G.B Rayner ◽  
G Lucovsky
Keyword(s):  
Plasma Processing ◽  
Remote Plasma ◽  
Dielectric Interfaces
Sign in / Sign up

Export Citation Format

Share Document