Adhesion-enhanced thick copper film deposition on aluminum oxide by an Ion-beam-mixed Al seed layer

2012 ◽  
Vol 61 (2) ◽  
pp. 263-267 ◽  
Author(s):  
Hyung-Jin Kim ◽  
Jae-Won Park
Keyword(s):  
Aluminum Oxide ◽  
Seed Layer ◽  
Ion Beam ◽  
Copper Film ◽  
Film Deposition

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

The Novel TEM Sample Preparation Approach for Targeted via with Barrier/Cu Seed Layer Inspection

2009 ◽  
Author(s):  
Wen-Fei Hsieh ◽  
Shih-Hsiang Tseng ◽  
Bo Min She
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Seed Layer ◽  
Target Location ◽  
Process Development ◽  
Process Integration ◽  
Ion Beam ◽  
Main Tool ◽  
Dual Beam ◽  
Sample Preparation Procedure

Abstract In this study, an FIB-based cross section TEM sample preparation procedure for targeted via with barrier/Cu seed layer is introduced. The dual beam FIB with electron beam for target location and Ga ion beam for sample milling is the main tool for the targeted via with barrier/Cu seed layer inspection. With the help of the FIB operation and epoxy layer protection, ta cross section TEM sample at a targeted via with barrier/Cu seed layer could be made. Subsequent TEM inspection is used to verify the quality of the structure. This approach was used in the Cu process integration performance monitor. All these TEM results are very helpful in process development and yield improvement.

Ion beam pretreatment of polymeric substrates for ITO thin film deposition

2008 ◽  
Vol 10 (7) ◽  
pp. 941-949 ◽  
Author(s):  
Jun-Sik Cho ◽  
Younggun Han ◽  
Jerome J. Cuomo
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Polymeric Substrates

MOCVD Copper Metallization for High Aspect Ratios TSV 3D Integration.

2018 ◽  
Vol 2018 (1) ◽  
pp. 000718-000727 ◽  
Author(s):  
Sabrina Fadloun ◽  
Dean Stephens ◽  
Patrice Gergaud ◽  
Elisabeth Blanquet ◽  
Thierry Mourier ◽  
...  
Keyword(s):  
Seed Layer ◽  
Copper Film ◽  
Chemical Vapor ◽  
Copper Metallization ◽  
Organic Chemical ◽  
Aspect Ratios ◽  
Organometallic Precursor ◽  
Strong Adhesion ◽  
Metal Organic ◽  
Copper Seed Layer

Abstract MOCVD (Metal-Organic Chemical Vapor Deposition) copper metallization was developed on 300mm wafers, to fulfil 3D Through-Silicon Via (TSV) interconnect requirements. Using a fluorine-free organometallic precursor, the bis(dimethylamino-2-propoxy)copper (II) Cu[OCHMeCH2NMe2]2 at low temperature deposition, we developed a high purity, low stress copper film with strong adhesion to a TiN barrier layer. Argon was used as a carrier gas and H2 and/or H2O as a co-reactant. This MOCVD technique offers good conformality observed with 10μm×120μmTSVs. The thin copper seed layer was successfully integrated on 300mm wafers. A new XRD protocol was developed to characterize the copper seed layer along the TSV sidewalls, revealed higher microstructure quality, lower stressed in the case of copper film deposited by CVD compared to those deposited by i-PVD.

scholarly journals Giant Conductivity Modulation of Aluminum Oxide Using Focused Ion Beam

2019 ◽  
Vol 1 (7) ◽  
pp. 1208-1214
Author(s):  
Simone Bianconi ◽  
Min-Su Park ◽  
Hooman Mohseni
Keyword(s):  
Aluminum Oxide ◽  
Focused Ion Beam ◽  
Ion Beam

TiOxCy Thin Film Deposition by CO2+-Ion Beam Sputtering of Titanium

1993 ◽  
Vol 316 ◽  
Author(s):  
BERTILO E. KEMPF
Keyword(s):  
Near Infrared ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Refractive Indices ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Beam Sputtering ◽  
Current Densities

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.

Thin-film deposition of (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ by pulsed ion beam evaporation

2000 ◽  
Vol 28 (5) ◽  
pp. 1545-1548 ◽  
Author(s):  
T. Sonegawa ◽  
K. Ohtomo ◽  
Weihua Jiang ◽  
K. Yatsui
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition

scholarly journals Tunable rainbow light trapping in ultrathin resonator arrays

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Katelyn Dixon ◽  
Arthur O. Montazeri ◽  
Moein Shayegannia ◽  
Edward S. Barnard ◽  
Stefano Cabrini ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Light Trapping ◽  
Ion Beam ◽  
Field Enhancement ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Precise Control ◽  
Tuning Parameters ◽  
Multiple Wavelengths ◽  
Design Paradigm

AbstractRainbow light trapping in plasmonic devices allows for field enhancement of multiple wavelengths within a single device. However, many of these devices lack precise control over spatial and spectral enhancement profiles and cannot provide extremely high localised field strengths. Here we present a versatile, analytical design paradigm for rainbow trapping in nanogroove arrays by utilising both the groove-width and groove-length as tuning parameters. We couple this design technique with fabrication through multilayer thin-film deposition and focused ion beam milling, which enables the realisation of unprecedented feature sizes down to 5 nm and corresponding extreme normalised local field enhancements up to 103. We demonstrate rainbow trapping within the devices through hyperspectral microscopy and show agreement between the experimental results and simulation. The combination of expeditious design and precise fabrication underpins the implementation of these nanogroove arrays for manifold applications in sensing and nanoscale optics.

Sign in / Sign up

Export Citation Format

Share Document