Studies of the driving force for room-temperature microstructure evolution in electroplated copper films

Author(s):  
Haebum Lee ◽  
William D. Nix ◽  
S. Simon Wong
1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.


1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.


1999 ◽  
Vol 564 ◽  
Author(s):  
R. Faust ◽  
Q. Jiang

AbstractThe effect of various barrier materials on the microstructure of electroplated Copper films was investigated. Analysis of the Cu was performed at the as-deposited, room temperature stabilized, and annealed states. It shows that the barrier material can have a dramatic effect on the properties of electroplated Cu.


1999 ◽  
Vol 86 (9) ◽  
pp. 4930-4935 ◽  
Author(s):  
Kazuyoshi Ueno ◽  
Tom Ritzdorf ◽  
Scott Grace

1999 ◽  
Vol 562 ◽  
Author(s):  
J. M. E. Harper ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
L. Gignac ◽  
I. C. Noyan ◽  
...  

ABSTRACTWe present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness and compressive stress. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several μm, the decreasing grain boundary contribution to electron scattering lowers the resistivity by tens of percent to near-bulk values. Concurrently, as the volume of grain boundaries decreases, the stress is shown to change in the tensile direction by tens of MPa. The as-deposited grain size is also shown to be consistent with grain boundary pinning.


2001 ◽  
Vol 32 (7) ◽  
pp. 579-585 ◽  
Author(s):  
W.H Teh ◽  
L.T Koh ◽  
S.M Chen ◽  
J Xie ◽  
C.Y Li ◽  
...  

1999 ◽  
Vol 564 ◽  
Author(s):  
J. M. E. Harper ◽  
C. Cabral ◽  
P. C. Andricacos ◽  
L. Gignac ◽  
I. C. Noyan ◽  
...  

AbstractWe present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness and compressive stress. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several μm, the decreasing grain boundary contribution to electron scattering lowers the resistivity by tens of percent to near-bulk values. Concurrently, as the volume of grain boundaries decreases, the stress is shown to change in the tensile direction by tens of MPa. The as-deposited grain size is also shown to be consistent with grain boundary pinning.


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