scholarly journals Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

2004 ◽  
Vol 22 (4) ◽  
pp. 1275-1284 ◽  
Author(s):  
A. Barranco ◽  
J. Cotrino ◽  
F. Yubero ◽  
J. P. Espinós ◽  
A. R. González-Elipe
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Porous Sio2

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

1994 ◽  
Vol 343 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

Phase stability of epitaxial KTaxNb1−xO3 thin films deposited by metalorganic chemical vapor deposition

2003 ◽  
Vol 18 (1) ◽  
pp. 106-110 ◽  
Author(s):  
B. M. Nichols ◽  
B. H. Hoerman ◽  
J-H. Hwang ◽  
T. O. Mason ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Phase Stability ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Structural Phase ◽  
Chemical Vapor ◽  
Rhombohedral Phase ◽  
Metalorganic Chemical

The phase stability of epitaxial KTaxNb1−xO3 (0 ≤ x ≤ 1) thin films, with compositions over the entire solid solution range, was investigated. KTaxNb1−xO3 thin films were deposited on (100) MgAl2O4 substrates by metalorganic chemical vapor deposition. Films with compositions x ≤ 0.30 were orthorhombic, as determined by x-ray diffraction. Dielectric measurements at room temperature indicated the presence of morphotropic phase boundaries at x = 0.30 and at x = 0.74. Temperature-dependent measurements of the dielectric constant for KNbO3 from 80 to 800 K indicated three structural phase transitions at 710, 520, and 240 K. For intermediate compositions, a decrease in the Curie and tetragonal–orthorhombic transition temperatures was observed with increasing Ta atomic percent, similar to the bulk phase equilibrium. In contrast to bulk materials, an increase in the orthorhombic–rhombohedral transition temperature with increasing x was observed for the films, resulting in the stabilization of a rhombohedral phase at room temperature for compositions 0.45 ≤ x ≤ 0.73. Differences between the phase stability for the thin films and bulk were attributed to lattice misfit strain.

Sign in / Sign up

Export Citation Format

Share Document