Preparation of single phase 2H-MoTe2 films by molecular beam epitaxy

2020 ◽  
Vol 523 ◽  
pp. 146428
Author(s):  
Trung T. Pham ◽  
Roshan Castelino ◽  
Alexandre Felten ◽  
Robert Sporken
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase

Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy

2004 ◽  
Vol 22 (3) ◽  
pp. 1450 ◽  
Author(s):  
Xiaojun Yu ◽  
Paulina S. Kuo ◽  
Kai Ma ◽  
Ofer Levi ◽  
Martin M. Fejer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Phase Growth ◽  
Growth Studies

scholarly journals Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature

2011 ◽  
Vol 323 (1) ◽  
pp. 363-367 ◽  
Author(s):  
M. Hassan ◽  
G. Springholz ◽  
R.T. Lechner ◽  
H. Groiss ◽  
R. Kirchschlager ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Ferromagnetic Transition

Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy

1997 ◽  
Vol 70 (24) ◽  
pp. 3242-3244 ◽  
Author(s):  
Y. Qiu ◽  
S. A. Nikishin ◽  
H. Temkin ◽  
N. N. Faleev ◽  
Yu. A. Kudriavtsev
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Phase ◽  
Nitrogen Concentration ◽  
High Nitrogen ◽  
Metal Organic ◽  
High Nitrogen Concentration

Magnetic and electrical properties of single-phase, single-crystal Fe16N2 films epitaxially grown by molecular beam epitaxy (invited)

1996 ◽  
Vol 79 (8) ◽  
pp. 5576 ◽  
Author(s):  
Yutaka Sugita ◽  
Hiromasa Takahashi ◽  
Matahiro Komuro ◽  
Masukazu Igarashi ◽  
Ryo Imura ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Single Phase ◽  
Magnetic And Electrical Properties

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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