Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method

Author(s):  
Jahangir Alam ◽  
Ravi Bathe ◽  
R. D. Vispute ◽  
John M. Zavada ◽  
Cole W. Litton ◽  
...  
1994 ◽  
Vol 33 (Part 1, No. 7A) ◽  
pp. 4066-4069 ◽  
Author(s):  
Yoshihiro Sotome ◽  
Junji Senzaki ◽  
Shin-ichi Morita ◽  
Satoshi Tanimoto ◽  
Tadahiko Hirai ◽  
...  

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