Preparation of TiN films by arc ion plating using dc and pulsed biases

2004 ◽  
Vol 22 (2) ◽  
pp. 250-254 ◽  
Author(s):  
M. D. Huang ◽  
Y. P. Lee ◽  
C. Dong ◽  
G. Q. Lin ◽  
C. Sun ◽  
...  
ChemInform ◽  
2010 ◽  
Vol 26 (47) ◽  
pp. no-no
Author(s):  
H. YUMOTO ◽  
K. KANEKO ◽  
M. ISHIHARA ◽  
K. AKASI ◽  
T. KANEKO

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 647-651 ◽  
Author(s):  
Tatsuya Matsue ◽  
Takao Hanabusa ◽  
Yasukazu Ikeuchi

2015 ◽  
Vol 28 (8) ◽  
pp. 984-993 ◽  
Author(s):  
Yan-Hui Zhao ◽  
Wen-Jin Yang ◽  
Chao-Qian Guo ◽  
Yu-Qiu Chen ◽  
Bao-Hai Yu ◽  
...  

1999 ◽  
Vol 65 (635) ◽  
pp. 1635-1641 ◽  
Author(s):  
Yasuhiro MIKI ◽  
Tadashi TANIGUCHI ◽  
Kazuya KUSAKA ◽  
Takao HANABUSA ◽  
Eiji MAITANI

1994 ◽  
Vol 68-69 ◽  
pp. 141-145 ◽  
Author(s):  
G.H. Kang ◽  
H. Uchida ◽  
E.S. Koh

Author(s):  
K. AKARI ◽  
H. TAMAGAKI ◽  
T. KUMAKIRI ◽  
K. TSUJI ◽  
E.S. KOH ◽  
...  

2013 ◽  
Vol 706-708 ◽  
pp. 180-183
Author(s):  
Jie Wang ◽  
Shi Hang Jiang ◽  
Juan Juan Wang

Depositing TiN Film on the surface of 4Cr5MoSiV1 with multi-arc ion plating technology method. And 350°C, 450°C, 550°C and 650 °C short oxidation test and 550 °C cyclic oxidation test. By scanning electron microscopy (SEM) and electron spectrometry (EDS) to analysis micro-structure and phase structure of test samples, study TiN film on oxidation resistance, and utilize indentation method to measure mechanical properties. Results show: In a short time under oxidizing conditions, at 550 °C the TiN film still has a good oxidation resistance. The film still have a sufficient bonding strength below 600 °C.


2009 ◽  
Vol 15 (6) ◽  
pp. 943-948 ◽  
Author(s):  
Shi Hong Zhang ◽  
Yun Kon Joo ◽  
Jae Young Cho ◽  
Hui Gon Chun ◽  
Tong Yul Cho ◽  
...  

1990 ◽  
Vol 43-44 ◽  
pp. 324-335 ◽  
Author(s):  
C.N. Tai ◽  
E.S. Koh ◽  
K. Akari

Sign in / Sign up

Export Citation Format

Share Document