Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Hidenobu Fukutome; Hiroshi Arimoto; Shigehiko Hasegawa; Hisao Nakashima

doi:10.1116/1.1627792

Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627792 ◽

2004 ◽

Vol 22 (1) ◽

pp. 358 ◽

Cited By ~ 14

Author(s):

Hidenobu Fukutome ◽

Hiroshi Arimoto ◽

Shigehiko Hasegawa ◽

Hisao Nakashima

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscopy

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Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 µm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.2033 ◽

2006 ◽

Vol 45 (3B) ◽

pp. 2033-2036

Author(s):

Shigehiko Hasegawa ◽

Wataru Doi ◽

Atsushi Yabuuchi ◽

Hajime Asahi

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Scanning Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Applied Physics Letters ◽

10.1063/1.1509118 ◽

2002 ◽

Vol 81 (13) ◽

pp. 2475-2477 ◽

Cited By ~ 4

Author(s):

Toshiko Okui ◽

Shigehiko Hasegawa ◽

Hisao Nakashima ◽

Hidenobu Fukutome ◽

Hiroshi Arimoto

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627793 ◽

2004 ◽

Vol 22 (1) ◽

pp. 373 ◽

Cited By ~ 9

Author(s):

Xiang-Dong Wang ◽

Chun-li Liu ◽

Aaron Thean ◽

Erika Duda ◽

Ran Liu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Two Dimensional ◽

Ultrashallow Junction

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Cited By ~ 1

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Cited By ~ 4

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3130016 ◽

2021 ◽

pp. 1-7

Author(s):

Zhihao Chen ◽

Xinxin Yu ◽

Jianjun Zhou ◽

Shuman Mao ◽

Yuechan Kong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied Physics Letters ◽

10.1063/1.3148830 ◽

2009 ◽

Vol 94 (22) ◽

pp. 223512 ◽

Cited By ~ 59

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent

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Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3484043 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054509 ◽

Cited By ~ 75

Author(s):

S. Dhar ◽

S. Haney ◽

L. Cheng ◽

S.-R. Ryu ◽

A. K. Agarwal ◽

...

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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