Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

S. Dhar; S. Haney; L. Cheng; S.-R. Ryu; A. K. Agarwal; L. C. Yu; K. P. Cheung

doi:10.1063/1.3484043

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3484043 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054509 ◽

Cited By ~ 75

Author(s):

S. Dhar ◽

S. Haney ◽

L. Cheng ◽

S.-R. Ryu ◽

A. K. Agarwal ◽

...

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Silicon Carbide ◽

10.1002/9783527629077.ch11 ◽

2011 ◽

pp. 267-290

Author(s):

Vinayak Tilak

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc21 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC21 ◽

Cited By ~ 2

Author(s):

Yukio Nakabayashi ◽

Takamitsu Ishihara ◽

Toshinori Numata ◽

Ken Uchida ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Experimental Evaluation ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Normal Mass

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Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4808465 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214508 ◽

Cited By ~ 2

Author(s):

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Unified Model ◽

Oxide Semiconductor

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Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Solid State Communications ◽

10.1016/j.ssc.2005.10.027 ◽

2006 ◽

Vol 137 (1-2) ◽

pp. 26-29

Author(s):

J.H. Kim ◽

J.H. Jung ◽

T.W. Kim

Keyword(s):

Metal Oxide ◽

Electronic Structures ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Nanometer metal-oxide-semiconductor field-effect transistors: A flexible tool for studying inversion layer physics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583337 ◽

1986 ◽

Vol 4 (1) ◽

pp. 380 ◽

Cited By ~ 15

Author(s):

P. M. Mankiewich

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flexible Tool

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Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627792 ◽

2004 ◽

Vol 22 (1) ◽

pp. 358 ◽

Cited By ~ 14

Author(s):

Hidenobu Fukutome ◽

Hiroshi Arimoto ◽

Shigehiko Hasegawa ◽

Hisao Nakashima

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscopy

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Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2013.2289330 ◽

2013 ◽

Vol 13 (4) ◽

pp. 456-462 ◽

Cited By ~ 22

Author(s):

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

Sang Hyeon Kim ◽

Rena Suzuki ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Fermi Level ◽

Conduction Band ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Fermi Level Pinning

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Rectification of Millimeter Waves in Nanometer-Scale Si-Inversion-Layer Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.4403 ◽

1996 ◽

Vol 35 (Part 1, No. 8) ◽

pp. 4403-4408

Author(s):

Tatsuya Tomaru ◽

Tsuneo Ichiguchi ◽

Hideyuki Matsuoka

Keyword(s):

Metal Oxide ◽

Millimeter Waves ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale

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