Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Toshiko Okui; Shigehiko Hasegawa; Hisao Nakashima; Hidenobu Fukutome; Hiroshi Arimoto

doi:10.1063/1.1509118

Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Applied Physics Letters ◽

10.1063/1.1509118 ◽

2002 ◽

Vol 81 (13) ◽

pp. 2475-2477 ◽

Cited By ~ 4

Author(s):

Toshiko Okui ◽

Shigehiko Hasegawa ◽

Hisao Nakashima ◽

Hidenobu Fukutome ◽

Hiroshi Arimoto

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 µm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.2033 ◽

2006 ◽

Vol 45 (3B) ◽

pp. 2033-2036

Author(s):

Shigehiko Hasegawa ◽

Wataru Doi ◽

Atsushi Yabuuchi ◽

Hajime Asahi

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Scanning Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Cross Sectional

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Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1627792 ◽

2004 ◽

Vol 22 (1) ◽

pp. 358 ◽

Cited By ~ 14

Author(s):

Hidenobu Fukutome ◽

Hiroshi Arimoto ◽

Shigehiko Hasegawa ◽

Hisao Nakashima

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscopy

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Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology

Applied Surface Science ◽

10.1016/s0169-4332(98)00054-3 ◽

1998 ◽

Vol 130-132 ◽

pp. 221-230 ◽

Cited By ~ 29

Author(s):

J.W. Lyding ◽

K. Hess ◽

G.C. Abeln ◽

D.S. Thompson ◽

J.S. Moore ◽

...

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon Surfaces ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Semiconductor Technology ◽

Tunneling Microscopy ◽

Hydrogen Deuterium

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Comparison of Light-Emission Efficiencies from Si–Metal-Oxide-Semiconductor Junctions and from Si in Scanning Tunneling Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.4904 ◽

2000 ◽

Vol 39 (Part 1, No. 8) ◽

pp. 4904-4909 ◽

Cited By ~ 3

Author(s):

Yoichi Uehara ◽

Masashi Kuwahara ◽

Sukekatsu Ushioda

Keyword(s):

Metal Oxide ◽

Scanning Tunneling Microscopy ◽

Light Emission ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Tunneling ◽

Tunneling Microscopy

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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