Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

2004 ◽  
Vol 22 (1) ◽  
pp. 53-60 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
C. Hedlund ◽  
E. A. Joseph ◽  
G. S. Oehrlein ◽  
T. J. Dalton
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Film Formation ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Silicon ◽  
Fluorocarbon Film

Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices

1986 ◽  
Vol 48 (2) ◽  
pp. 168-170 ◽  
Author(s):  
B. Abeles ◽  
L. Yang ◽  
P. D. Persans ◽  
H. S. Stasiewski ◽  
W. Lanford
Keyword(s):  
Infrared Spectroscopy ◽  
Silicon Nitride ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Nitride Superlattices ◽  
Silicon Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

Micromechanical characterization of chemically vapor deposited ceramic films

1994 ◽  
Vol 9 (8) ◽  
pp. 2072-2078 ◽  
Author(s):  
J.M. Grow ◽  
R.A. Levy
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Boron Nitride ◽  
Silicon Dioxide ◽  
Boron Carbide ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Ceramic Films ◽  
Chemically Vapor Deposited ◽  
Micromechanical Characterization

In this study, nanoindentation is used to determine Young's modulus of chemically vapor deposited films consisting of silicon carbide, silicon nitride, boron carbide, boron nitride, and silicon dioxide. Diethylsilane and ditertiarybutylsilane were used as precursors in the synthesis of the silicon-based material, while triethylamine borane complex was used for the boron-based material. The modulus of these films was observed to be dependent on the processing conditions and resulting composition of the deposits. For the silicon carbide, silicon nitride, boron carbide, and boron nitride films, the carbon content in the films was observed to increase significantly with higher deposition temperatures, resulting in a corresponding decrease in values of Young's modulus. The composition of the silicon dioxide films was near stoichiometry over the investigated deposition temperature range (375–475 °C) with correspondingly small variations in the micromechanical properties. Subsequent annealing of these oxide films resulted in a significant increase in the values of Young's modulus due to hydrogen and moisture removal.

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