Line edge roughness of sub-100 nm dense and isolated features: Experimental study

Yuansheng Ma; G. Tsvid; Franco Cerrina

doi:10.1116/1.1624254

Line edge roughness of sub-100 nm dense and isolated features: Experimental study

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1624254 ◽

2003 ◽

Vol 21 (6) ◽

pp. 3124 ◽

Cited By ~ 17

Author(s):

Yuansheng Ma ◽

G. Tsvid ◽

Franco Cerrina

Keyword(s):

Experimental Study ◽

Line Edge Roughness ◽

Edge Roughness

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Experimental study of mask line edge roughness transfer in DUV and EUV lithography patterning process

10.1117/12.373302 ◽

1999 ◽

Cited By ~ 1

Author(s):

Pei-yang Yan ◽

Guojing Zhang

Keyword(s):

Experimental Study ◽

Line Edge Roughness ◽

Euv Lithography ◽

Edge Roughness

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Characterization of Line-Edge Roughness in Cu/Low-kInterconnect Pattern

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2501 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2501-2505 ◽

Cited By ~ 2

Author(s):

Atsuko Yamaguchi ◽

Daisuke Ryuzaki ◽

Ken-ichi Takeda ◽

Jiro Yamamoto ◽

Hiroki Kawada ◽

...

Keyword(s):

Line Edge Roughness ◽

Edge Roughness

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Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1490392 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1342 ◽

Cited By ~ 44

Author(s):

Masaki Yoshizawa ◽

Shigeru Moriya

Keyword(s):

Evaluation Method ◽

Line Edge Roughness ◽

Diffusion Effect ◽

Acid Diffusion ◽

Edge Roughness ◽

On Line ◽

Roughness Evaluation

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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2276072 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3277-3284 ◽

Cited By ~ 26

Author(s):

Greg Leung ◽

Chi On Chui

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Line Edge Roughness ◽

Random Dopant Fluctuation ◽

Edge Roughness ◽

Effect Transistor ◽

Random Dopant

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Application of cellular neural networks in the measurement of line-width and line edge roughness

10.1117/12.676727 ◽

2006 ◽

Author(s):

Hong-bo Li ◽

Xue-zheng Zhao ◽

Wei Chu ◽

Ning Li

Keyword(s):

Neural Networks ◽

Line Width ◽

Cellular Neural Networks ◽

Line Edge Roughness ◽

Edge Roughness

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Fabrication of low line edge roughness mold by SOG replica method

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004. ◽

10.1109/imnc.2004.245725 ◽

2004 ◽

Author(s):

Y. Kurashima ◽

H. Hiroshima ◽

M. Komuro ◽

N. Yamazaki ◽

J. Taniguchi ◽

...

Keyword(s):

Replica Method ◽

Line Edge Roughness ◽

Edge Roughness

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A new physical model and experimental measurements of copper interconnect resistivity considering size effects and line-edge roughness (LER)

2009 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2009.5090396 ◽

2009 ◽

Cited By ~ 24

Author(s):

Gerald Lopez ◽

Jeffrey Davis ◽

James Meindl

Keyword(s):

Physical Model ◽

Size Effects ◽

Experimental Measurements ◽

Line Edge Roughness ◽

Copper Interconnect ◽

Edge Roughness

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Estimation of critical dimension and line edge roughness using a neural network

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000806 ◽

2021 ◽

Vol 39 (3) ◽

pp. 032602

Author(s):

Dehua Li ◽

Soo-Young Lee ◽

Jin Choi ◽

Seom-Beom Kim ◽

Chan-Uk Jeon

Keyword(s):

Neural Network ◽

Critical Dimension ◽

Line Edge Roughness ◽

Edge Roughness

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Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409703 ◽

2015 ◽

Cited By ~ 2

Author(s):

Y. Morita ◽

T. Maeda ◽

H. Ota ◽

W. Mizubayashi ◽

S. O'uchi ◽

...

Keyword(s):

Layer By Layer ◽

Line Edge Roughness ◽

Surface Flattening ◽

Wafer Scale ◽

Uniform Layer ◽

Edge Roughness

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Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.882784 ◽

2006 ◽

Vol 53 (11) ◽

pp. 2755-2763 ◽

Cited By ~ 28

Author(s):

H. Fukutome ◽

Y. Momiyama ◽

T. Kubo ◽

Y. Tagawa ◽

T. Aoyama ◽

...

Keyword(s):

Line Edge Roughness ◽

Direct Evaluation ◽

Edge Roughness

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