Nanometer-level stitching in raster-scanning electron-beam lithography using spatial-phase locking

2003 ◽  
Vol 21 (6) ◽  
pp. 2650 ◽  
Author(s):  
J. T. Hastings ◽  
Feng Zhang ◽  
Henry I. Smith
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Phase Locking ◽  
Raster Scanning ◽  
Spatial Phase ◽  
Scanning Electron Beam ◽  
Scanning Electron

The Fabrication of 2-D Global Fiducial Grid with High Resolution for Spatial Phase Locked e-Beam Lithography

2008 ◽  
Vol 575-578 ◽  
pp. 1252-1257
Author(s):  
Jian Feng Dai ◽  
Qing Wang ◽  
Wei Xue Li ◽  
Yong Fu Cui ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Fabrication Process ◽  
Large Area ◽  
Sem Images ◽  
Beam Position ◽  
Spatial Phase ◽  
Scanning Electron Beam ◽  
User Friendly ◽  
Scanning Electron

The spatial phase locked scanning electron beam lithography systems (SPLEBL) is a new lithography technique with a pattern placement precision of about 1 nm. The SPLEBL technique can solve the major problem of poor placement accuracy existed in the conventional scanning electron beam lithography for that it uses a Fourier technique to detect the beam position in real time during exposure. The fiducial grid plays a key role in SPLEBL. The two-dimensional global fiducial grid with a grid period of 250 nm placed on top of the e-beam resist used in SPLEBL with high contrast, high brightness, long-range spatial-phase coherence, large area and a pattern placement precision of about 1 nm is fabricated using optical interference lithography in this article. The detail fabrication process is described and the SEM images of the fabricated grid are also presented in this paper. Only one evaporation step and several spin-coating steps are required in the fabrication process, so it is simple and user friendly.

Scanning electron beam lithography

1983 ◽  
Vol 41 ◽  
pp. 78-81
Author(s):  
Alec N. Broers
Keyword(s):  
Electron Beam ◽  
Integrated Circuit ◽  
Electron Beam Lithography ◽  
Large Scale ◽  
Electron Beams ◽  
Electrical Characterization ◽  
Optical Methods ◽  
Important Place ◽  
Scanning Electron Beam ◽  
Scanning Electron

This paper discusses the role of scanning electron beam lithography in semiconductor microcircuit production and in the experimental fabrication of devices in the laboratory. It also describes the electron optical equipment developed for these applications.Electron beam lithography has found an important place in integrated circuit production through its ability to produce structures without masks, rather than because it can produce high resolution. Resolution, however, has been important in research and development where electron beams have been used to produce smaller devices than any other method. Many early micron and sub-micron large scale integration devices were built first with electron beams, and structures as small as a few tens of nanometers have been made for electrical characterization.Optical methods are generally more economical than electron beams for the routine production of microcircuits because exposure rates are higher and system costs are lower. Resolution with optical lithography is adequate for all devices likely to be in production in the next few years (minimum linewidth 0.75μ - 2μ) so electron beams at present only offer an advantage in fabricating masks, or in exposing customized wafers where masks are not replicated a sufficiently large number of times to offset their cost.

Scanning Electron Beam Lithography for Fabrication of Magnetic Bubble Circuits

1976 ◽  
Vol 20 (4) ◽  
pp. 376-388 ◽  
Author(s):  
T. H. P. Chang ◽  
M. Hatzakis ◽  
A. D. Wilson ◽  
A. J. Speth ◽  
A. Kern ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Magnetic Bubble ◽  
Scanning Electron Beam ◽  
Scanning Electron
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