Electrical characterization of silicon-on-insulator structures with a nondamaging elastic–metal gate

2004 ◽  
Vol 22 (1) ◽  
pp. 450
Author(s):  
Robert J. Hillard ◽  
William H. Howland ◽  
Louison C. Tan ◽  
Win Ye
Keyword(s):  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Metal Gate

(Invited) Electrical Characterization of Ge-pFETs with HfO2/TiN Metal Gate: Review of Possible Defects Impacting the Hole Mobility

2019 ◽  
Vol 28 (2) ◽  
pp. 157-169 ◽  
Author(s):  
Jerome Mitard ◽  
Benjamin Vincent ◽  
Brice De Jaeger ◽  
Raymond Krom ◽  
R. Loo ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Hole Mobility ◽  
Metal Gate ◽  
Tin Metal

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

1998 ◽  
Vol 264-268 ◽  
pp. 1097-1100 ◽  
Author(s):  
Peter Tobias ◽  
Shinji Nakagomi ◽  
A. Baranzahi ◽  
R. Zhu ◽  
Ingemar Lundström ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Sensors ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Metal Gate ◽  
Catalytic Metal

Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials

2001 ◽  
Vol 40 (Part 1, No. 9A) ◽  
pp. 5217-5220 ◽  
Author(s):  
Tsugunori Okumura ◽  
Kazuyoshi Eguchi ◽  
Aimin En ◽  
Michihiko Suhara
Keyword(s):  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Contactless Method

Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

2010 ◽  
Author(s):  
Lim Soon Huat ◽  
Lwin Hnin-Ei ◽  
Vinod Narang ◽  
J.M. Chin
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Large Area ◽  
Scanning Capacitance Microscopy ◽  
Electrical Failure ◽  
Silicon Transistors ◽  
Soi Substrates ◽  
Electrical Data

Abstract Scanning capacitance microscopy (SCM) has been used in electrical failure analysis (EFA) to isolate failing silicon transistors on silicon-on-insulator (SOI) substrates. With the shrinking device geometry and increasing layout complexity, the defects in transistors are often non-visual and require detailed electrical analysis to pinpoint the defect signature. This paper demonstrates the use of SCM technique for EFA on SOI device substrates, as well as using this technique to isolate defective contacts in a relatively large-area scan of 25µm x 25µm. We also performed dC/dV electrical characterization of defective transistors, and correlated the data from SCM technique and electrical data from nano-probing to locate failing transistors.

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