Ultrashallow junction formation by point defect engineering

2004 ◽  
Vol 22 (1) ◽  
pp. 302 ◽  
Author(s):  
Lin Shao ◽  
Phillip E. Thompson ◽  
P. A. W. van der Heide ◽  
Sanjay Patel ◽  
Quak. Y. Chen ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Junction Formation ◽  
Ultrashallow Junction

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

Ultra-shallow junction formation by Point Defect Engineering

2002 ◽  
Author(s):  
Wei-Kan Chu Wei-Kan Chu ◽  
Lin Shao Lin Shao ◽  
J. Liu ◽  
P.E. Thompson ◽  
X. Wang ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Point Defect Engineering and Its Application in Shallow Junction Formation

2002 ◽  
Vol 5 (10) ◽  
pp. G93 ◽  
Author(s):  
Lin Shao ◽  
J. R. Liu ◽  
P. E. Thompson ◽  
X. M. Wang ◽  
I. Rusakova ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Point Defect Engineering Applied to Shallow Junction ULSI Processing

1989 ◽  
Vol 147 ◽  
Author(s):  
George A. Rozgonyi ◽  
J. W. Honeycutt
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Defect Engineering ◽  
Process Technology ◽  
Plan View ◽  
Dopant Activation ◽  
Qualitative Understanding ◽  
Junction Formation ◽  
Induced Defects

AbstractWe describe how a simple qualitative understanding of the interfacial reactions occurring during typical ULSI processes for junction formation, dopant activation, and contact silicidation can be used to eliminate end-of-range interstitial dislocation loops and beneficially impact the diffusion of dopants. Following a brief discussion of the well-documented effects of oxidation and nitridation on extended defects and dopant diffusion, conditions for elimination of implantation-induced defects are specified. Cross-section and plan-view TEM along with angle lapping and chemical etching of implanted and diffused junctions are presented to illustrate the application of point defect engineering to process technology.

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