Improved nucleation of TiN atomic layer deposition films on SiLK low-k polymer dielectric using an Al[sub 2]O[sub 3] atomic layer deposition adhesion layer

2003 ◽  
Vol 21 (3) ◽  
pp. 1099 ◽  
Author(s):  
J. W. Elam ◽  
C. A. Wilson ◽  
M. Schuisky ◽  
Z. A. Sechrist ◽  
S. M. George
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Adhesion Layer ◽  
Polymer Dielectric ◽  
Layer Deposition ◽  
Low K

Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects

2014 ◽  
Author(s):  
Hiroaki Kawasaki ◽  
Kenji Matsumoto ◽  
Hiroyuki Nagai ◽  
Yuuki Kikuchi ◽  
Peng Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Capping Layer ◽  
Layer Deposition ◽  
Low K

Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects

2002 ◽  
Vol 64 (1-4) ◽  
pp. 233-245 ◽  
Author(s):  
Gerald Beyer ◽  
Alessandra Satta ◽  
Jörg Schuhmacher ◽  
Karen Maex ◽  
Wim Besling ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Low K

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Characteristics of carbon-containing low-k dielectric SiCN thin films deposited via remote plasma atomic layer deposition

2021 ◽  
Vol 39 (4) ◽  
pp. 042404
Author(s):  
Chanwon Jung ◽  
Seokhwi Song ◽  
Hyunwoo Park ◽  
Youngjoon Kim ◽  
Eun Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Sicn Thin Films ◽  
Low K

Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition

2013 ◽  
Vol 62 (8) ◽  
pp. 1143-1149 ◽  
Author(s):  
Chang Young Kim ◽  
Hong Seok Lee ◽  
Chi Kyu Choi ◽  
Young Hun Yu ◽  
R. Navamathavan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Low K

Ta penetration into template-type porous low-k material during atomic layer deposition of TaN

2005 ◽  
Vol 98 (9) ◽  
pp. 094902 ◽  
Author(s):  
Akira Furuya ◽  
Nobuyuki Ohtsuka ◽  
Kaori Misawa ◽  
Miyoko Shimada ◽  
Shinichi Ogawa
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Low K
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