Single Crystal Silicon Epitaxy on Foreign Substrates

1966 ◽  
Vol 3 (2) ◽  
pp. 68-78 ◽  
Author(s):  
Arnold Miller ◽  
Harold M. Manasevit
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Epitaxy

Selective Silicon Epitaxy for Advanced Dram Structures

1989 ◽  
Vol 158 ◽  
Author(s):  
Gary B. Bronner
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Advanced Technology ◽  
Memory Cells ◽  
Crystal Silicon ◽  
Silicon Epitaxy ◽  
Silicon Devices ◽  
The Future ◽  
A Cell

ABSTRACTIn silicon microelectronics, memory cells and chips are used to develop the most advanced technology. In the future these chips will require three dimensional structures to achieve the needed density. This paper describes the use of selective silicon epitaxy to build truly three dimensional DRAM cells. The cell consists of a trench capacitor which is overgrown with single crystal silicon. A transistor and isolation are then built above the trench capacitor resulting in a cell that occupies the same area as the transistor alone. Fully functional memory cells have been built. The results show that selective silicon epitaxy is a realistic candidate for building three dimensional silicon devices.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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