Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si

2002 ◽  
Vol 20 (4) ◽  
pp. 1195-1201 ◽  
Author(s):  
Saurabh J. Ullal ◽  
Harmeet Singh ◽  
John Daugherty ◽  
Vahid Vahedi ◽  
Eray S. Aydil
Keyword(s):  
Plasma Etching ◽  
Plasma Reactor ◽  
Reactor Wall ◽  
Plasma Cleaning ◽  
O2 Plasma

The mechanism study of mixed Ar/O2 plasma-cleaning treatment on niobium surface for work function improvement

2019 ◽  
Vol 475 ◽  
pp. 143-150
Author(s):  
Zhiyan Zhang ◽  
Zongbiao Ye ◽  
Zhijun Wang ◽  
Fujun Gou ◽  
Bizhou Shen ◽  
...  
Keyword(s):  
Work Function ◽  
Plasma Cleaning ◽  
Mechanism Study ◽  
Cleaning Treatment ◽  
O2 Plasma

Photoluminescence characterization of SF6–O2 plasma etching of silicon

1996 ◽  
pp. 100-103
Author(s):  
I.A. Buyanova ◽  
A. Henry ◽  
B. Monemar ◽  
J.L. Lindström ◽  
G.S. Oehrlein
Keyword(s):  
Plasma Etching ◽  
O2 Plasma

scholarly journals Analysis on Self-Organized Formation of Nanofibers on Diamond-Like Carbon Film Surface during RF O2 Plasma Etching

2013 ◽  
Vol 38 (3) ◽  
pp. 447-450 ◽  
Author(s):  
Toru Harigai ◽  
Koyo Iwasa ◽  
Hirofumi Koji ◽  
Noriko Nitta ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Carbon Film ◽  
Film Surface ◽  
Diamond Like Carbon ◽  
Self Organized ◽  
Diamond Like Carbon Film ◽  
O2 Plasma

A Technique for the Detection of Liquid Slip at a Load-Bearing, High Shear Contact

2005 ◽  
Author(s):  
J. H. Choo ◽  
H. A. Spikes ◽  
M. Ratoi ◽  
R. P. Glovnea ◽  
A. Forrest
Keyword(s):  
High Speed ◽  
Physical Phenomenon ◽  
Solid Surfaces ◽  
The Other ◽  
Plasma Cleaning ◽  
High Shear ◽  
Test Rig ◽  
Simple Liquids ◽  
New Type ◽  
O2 Plasma

This research aims to exploit the physical phenomenon of simple liquids slipping against very smooth solid surfaces, to create a new type of bearing where the lubricant slips against one surface but not the other. To demonstrate the feasibility of this idea, a special test rig capable of measuring milli-Newton forces has been employed to measure friction in high-speed, sliding contacts between a steel roller and sapphire window, lubricated by hexadecane. Sapphire was made either lyophobic by coating with a self-assembled silane monolayer, or lyophilic by O2-plasma cleaning. The roller was made lyophilic. A significant reduction in friction was achieved with lyophobic sapphire but not with lyophilic sapphire. This reduced friction is believed to result from lubricant slip against the lyophobic surface. One possible application of such a bearing will be in microsystems and devices.

Plasma-Reactor Wall Interactions: Bromine-Fluorine Chemistry Duality in an Industrial Dry Etch Process

2015 ◽  
Vol 1803 ◽  
Author(s):  
M. Rizquez ◽  
A. Roussy ◽  
B. Bortoloti ◽  
J. Pinaton ◽  
Y. Goasduff
Keyword(s):  
Plasma Reactor ◽  
Industrial Process ◽  
Etching Process ◽  
Reactor Wall ◽  
Silicon Etching ◽  
Fluorine Chemistry ◽  
Starting Point ◽  
Dry Etch ◽  
Over Time ◽  
Wall Interactions

ABSTRACTThe purpose of the present paper is to investigate the composition of the coating formed on the plasma reactor walls after an industrial process which is divided into two steps, where the chemistries used are CF4/CH2F2 followed by HBr/O2. Since Fluorine traces have been detected through the plasma and over the wafer even during the second chemistry, investigations of the Br-F chemistry duality for a new silicon etching process have been performed in order to see the reactions which are taking place inside of the reactor. The understanding of these formations is really important to avoid process instabilities and get better performance of the transistors. The coating on the walls after the process and after the cleaning between wafers has been characterized in order to figure out the level of F traces after each step and to understand the reminiscence of this element over time. This study is the starting point to propose a modification on the Waferless AutoClean (WAC) used nowadays in an industrial process.

Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2 /O2 plasma etching treatment

2012 ◽  
Vol 209 (9) ◽  
pp. 1715-1720 ◽  
Author(s):  
M. Naamoun ◽  
A. Tallaire ◽  
F. Silva ◽  
J. Achard ◽  
P. Doppelt ◽  
...  
Keyword(s):  
Single Crystals ◽  
Formation Mechanism ◽  
Plasma Etching ◽  
Cvd Diamond ◽  
Etch Pit ◽  
Pit Formation ◽  
Diamond Single Crystals ◽  
O2 Plasma

Improved Reflectance for Textured Mc-Silicon Solar Cells by SF6/O2 Plasma Etching

2011 ◽  
Vol 128 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Tao Li ◽  
Chunlan Zhou ◽  
Lei Zhao ◽  
Wenjing Wang ◽  
Hailing Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Etching ◽  
Silicon Solar Cells ◽  
O2 Plasma
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