Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2 /O2 plasma etching treatment

2012 ◽  
Vol 209 (9) ◽  
pp. 1715-1720 ◽  
Author(s):  
M. Naamoun ◽  
A. Tallaire ◽  
F. Silva ◽  
J. Achard ◽  
P. Doppelt ◽  
...  
Keyword(s):  
Single Crystals ◽  
Formation Mechanism ◽  
Plasma Etching ◽  
Cvd Diamond ◽  
Etch Pit ◽  
Pit Formation ◽  
Diamond Single Crystals ◽  
O2 Plasma

Residual strain around grown-in defects in CVD diamond single crystals: A 2D and 3D Raman imaging study

2011 ◽  
Vol 208 (9) ◽  
pp. 2038-2044 ◽  
Author(s):  
Alexandre Crisci ◽  
Francis Baillet ◽  
Michel Mermoux ◽  
Ganna Bogdan ◽  
Milos Nesládek ◽  
...  
Keyword(s):  
Single Crystals ◽  
Residual Strain ◽  
Imaging Study ◽  
Cvd Diamond ◽  
Raman Imaging ◽  
Diamond Single Crystals ◽  
2D And 3D

Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates

2012 ◽  
Vol 26 ◽  
pp. 45-49 ◽  
Author(s):  
Junichi H. Kaneko ◽  
Fumiyuki Fujita ◽  
Yuta Konno ◽  
Takuto Gotoh ◽  
Norihiko Nishi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Cvd Diamond ◽  
Diamond Single Crystals

scholarly journals Performance of CVD diamond single crystals as side-bounce monochromators in the Laue geometry at high photon energies

2019 ◽  
Author(s):  
S. Stoupin ◽  
T. Krawczyk ◽  
J. P. C. Ruff ◽  
K. D. Finkelstein ◽  
H. H. Lee ◽  
...  
Keyword(s):  
Single Crystals ◽  
Cvd Diamond ◽  
Diamond Single Crystals ◽  
Laue Geometry

A spectroscopic study of optical centers in diamond grown by microwave-assisted chemical vapor deposition

1990 ◽  
Vol 5 (11) ◽  
pp. 2507-2514 ◽  
Author(s):  
A. T. Collins ◽  
M. Kamo ◽  
Y. Sato
Keyword(s):  
Chemical Vapor Deposition ◽  
Radiation Damage ◽  
Single Crystals ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Edge Emission ◽  
Microwave Assisted ◽  
Bright Blue ◽  
Methane Concentrations

Absorption and cathodoluminescence spectra have been recorded for single crystals of diamond and polycrystalline films of diamond, grown by microwave-assisted chemical vapor deposition (CVD) using methane and hydrogen. The investigation has been carried out to see to what extent the properties of CVD diamond are similar to those of conventional diamond, and to what extent they are unique. Studies have been made of the as-grown material, which has not been intentionally doped, and also samples that have been subjected to radiation damage and thermal annealing. The single crystals grown using methane concentrations of 0.5 to 1.0% exhibit bright blue “band A” emission and also intense edge emission, similar to the cathodoluminescence spectra of some natural type IIa diamonds. This implies that the crystals are relatively free from structural and chemical defects, a conclusion which is reinforced by the absence of any zero-phonon lines in the absorption spectra of crystals which have been subjected to radiation damage and annealing at 800 °C. Before radiation damage the spectrum does, however, reveal an absorption which increases progressively to higher energies, and which may be associated with sp2-bonded carbon. The Cathodoluminescence spectra after radiation damage indicate that the crystals contain some isolated nitrogen, and the detection of H3 luminescence, following thermal annealing at 800 °C, demonstrates for the first time that these samples contain small concentrations of nitrogen pairs. All of the polycrystalline films, grown using methane concentrations between 0.3 and 1.5%, have an absorption which increases progressively to higher energies, and which again is attributed to sp2-bonded carbon. This absorption is stronger in the films grown using higher methane concentrations. Films grown at a methane concentration of 0.3% also exhibit bright blue cathodoluminescence, although the edge emission is undetectably weak. The use of higher methane concentrations produces films with evidence in the cathodoluminescence spectra of nitrogen + vacancy and nitrogen + interstitial complexes, as well as optical centers unique to CVD diamond. One particular defect produces an emission and absorption line at 1.681 eV. By implanting conventional diamonds with 29Si ions it has been confirmed that this center involves silicon, and it has been shown that the 1.681 eV luminescence is relatively more intense in implanted diamonds which have a high concentration of isolated nitrogen.

Characteristics of some inclusions contained in synthetic diamond single crystals

2000 ◽  
Vol 293 (1-2) ◽  
pp. 107-111 ◽  
Author(s):  
Long-Wei Yin ◽  
Zeng-Da Zou ◽  
Mu-Sen Li ◽  
Yu-Xian Liu ◽  
Jian-Jun Cui ◽  
...  
Keyword(s):  
Single Crystals ◽  
Synthetic Diamond ◽  
Diamond Single Crystals
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