Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 20 (3) ◽  
pp. 1221 ◽  
Author(s):  
Gon Namkoong ◽  
W. Alan Doolittle ◽  
April S. Brown ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation

1993 ◽  
Vol 62 (20) ◽  
pp. 2566-2568 ◽  
Author(s):  
M. V. Ramana Murty ◽  
Harry A. Atwater ◽  
A. J. Kellock ◽  
J. E. E. Baglin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Low Energy ◽  
Very Low Temperature

Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth

2021 ◽  
Author(s):  
Alisha Nanwani ◽  
Ravindra Singh Pokharia ◽  
Jan Schmidt ◽  
H Joerg Osten ◽  
Suddhasatta Mahapatra
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
High Quality ◽  
Cyclic Annealing

Abstract The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 C) molecular beam epitaxy (MBE) on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 C) and high (500 C) temperatures, does not degrade the crystal quality any further. By promoting adatom downclimb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality
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