Reactive pulsed laser deposition of high-ksilicon dioxide and silicon oxynitride thin films for gate-dielectric applications

2002 ◽  
Vol 20 (3) ◽  
pp. 1157-1161 ◽  
Author(s):  
E. Desbiens ◽  
R. Dolbec ◽  
M. A. El Khakani
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Silicon Oxynitride ◽  
Laser Deposition

Preparation of silicon oxynitride (SiOxNy) thin films by pulsed laser deposition

1995 ◽  
Vol 260 (1) ◽  
pp. 10-13 ◽  
Author(s):  
Rong-Fu Xiao ◽  
Lun Chiu Ng ◽  
Chao Jiang ◽  
Z. Yang ◽  
George K.L. Wong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Silicon Oxynitride ◽  
Laser Deposition

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

2004 ◽  
Vol 80 (8) ◽  
pp. 1775-1779 ◽  
Author(s):  
J.-M. Liu ◽  
G.H. Shi ◽  
L.C. Yu ◽  
T.L. Li ◽  
Z.G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Laser Deposition

Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
R.-F. Xiao ◽  
L.C. Ng ◽  
H.B. Liao
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Conventional Chemical Vapor Deposition

AbstractA pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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