Enhancement of the film growth rate by promoting iodine adsorption in the catalyst-enhanced chemical vapor deposition of Cu

2002 ◽  
Vol 20 (2) ◽  
pp. 408-412 ◽  
Author(s):  
Oh-Kyum Kwon ◽  
Hyun-Bae Lee ◽  
Sang-Won Kang ◽  
Hyung-Sang Park
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Film Growth Rate ◽  
Iodine Adsorption

On the optimization of a dc arcjet diamond chemical vapor deposition reactor

1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Chemical Kinetic Model ◽  
Model Calculations ◽  
Chemical Vapor Deposition Reactor

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

c-axis lithium niobate thin film growth on silicon using solid-source metalorganic chemical vapor deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2662-2667 ◽  
Author(s):  
S. Y. Lee ◽  
R. S. Feigelson
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Optimal Growth ◽  
Optical Losses ◽  
Metalorganic Chemical

Textured c-axis oriented LiNbO3 films have been grown for waveguiding applications on silicon substrates by the solid-source metalorganic chemical vapor deposition (MOCVD) method using tetramethylheptanedionate sources. Thermally grown SiO2 layers were used as cladding layers to provide optical confinement in the LiNbO3 films. The texture direction could be varied from the [006] to the [012] direction by either increasing the growth temperature and/or decreasing the growth rate. Under optimal growth conditions, 100% [006] texturing could be achieved without the aid of an electric field or by using a SiNx buffer layer. The crystallinity and surface rms roughness of c-axis oriented films were found to be strongly dependent on the growth rate. Rocking curve full-width half-maximum (FWHM) values of (006) peaks could be decreased to less than 2° by increasing the growth rate. The surface roughness also decreased with growth rate, and rms values as low as 1.5 nm were achieved. On the other hand, too high a growth rate leads to increased roughness due to gas phase nucleation. The optical losses were closely correlated with surface roughness, and the best films had optical losses near 4.5 dB/cm at a wavelength of 632.8 nm.

High efficiency deposition of diamond film by hot filament chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 2957-2960 ◽  
Author(s):  
Yan Chen ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Growth ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Deposition Area ◽  
Hot Filament

A new designed reaction chamber with new relative distribution of filament and substrates has been adopted in order to increase the deposition area of diamond films and thus increase the deposition efficiency in conventional hot filament chemical vapor deposition (HFCVD) systems. The relatively small reaction chamber was cuboid shaped (50 × 25 × 25 mm3) and composed of molybdenum wafers. It was established in the vacuum chamber. A tungsten filament was hung up vertically in the center of the small chamber and parallel to the gas flow path. At the four inner sides of the reaction chamber, four Si(100) substrates (30 × 10 × 0.5 mm3) were installed to grow diamond films. The deposition results indicate that uniform diamond films can be obtained on the four substrates, and the film growth rate is the same at both ends of the substrates. The diamond film growth rate was about 1−2 μm/h, which is similar to those of the conventional HFCVD method. Thus, the deposition area and efficiency can be increased four times in the case without the filament number, gas flow rate, and power consumption.

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

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