Optical emission characteristics and mode transitions in low-frequency inductively coupled plasmas

2002 ◽  
Vol 20 (1) ◽  
pp. 251-264 ◽  
Author(s):  
K. N. Ostrikov ◽  
S. Xu ◽  
A. B. M. Shafiul Azam
Keyword(s):  
Low Frequency ◽  
Optical Emission ◽  
Emission Characteristics ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Mode Transitions ◽  
Coupled Plasmas

Observation of Atom and Ion Clouds Produced from Single Droplets of Sample in Inductively Coupled Plasmas by Optical Emission and Laser-Induced Fluorescence Imaging

1997 ◽  
Vol 51 (5) ◽  
pp. 607-616 ◽  
Author(s):  
John W. Olesik ◽  
Jeffery A. Kinzer ◽  
Garrett J. McGowan
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Inductively Coupled Plasmas ◽  
Double Exposure ◽  
Charge Coupled Device ◽  
Inductively Coupled ◽  
Intensified Charge Coupled Device ◽  
Coupled Plasmas ◽  
Single Droplets

An instrument to obtain optical emission and laser-induced fluorescence images of atom or ion clouds, each produced from isolated, monodisperse droplets of sample in an inductively coupled plasma, is described. An excimer laser pumped dye laser is used to produce a large (28-mm × 24-mm) beam for saturated fluorescence from atoms or ions throughout a large portion of the ICP. An intensified charge-coupled device (ICCD) detects optical emission or laser induced fluorescence snapshot images at the focal plane of an aberration-corrected slitless spectrograph. Images produced from a single laser pulse can be detected. Double-exposure emission images with 1-μs gate times can be acquired to monitor the movement of atom or ion clouds produced from a single droplet of sample solution. Variations in the number of atoms or ions produced as a function of time (or height) in the plasma can be monitored. Excitation in the plasma can be assessed from ratios of emission to fluorescence intensities.

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

2020 ◽  
Vol 10 (6) ◽  
pp. 903-908
Author(s):  
Da In Sung ◽  
Hyun Woo Tak ◽  
Dong Woo Kim ◽  
Geun Young Yeom
Keyword(s):  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Carbon Layer ◽  
Environmentally Benign ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
System A ◽  
Coupled Plasmas ◽  
Low Global Warming Potential ◽  
Dry Etch

In this study, the SiO2 etch characteristics of perfluorocarbon such as C4F8, C5F8, and C7F8 were investigated using inductively coupled plasmas (ICPs) to study the effect of a high C/F ratio on the etch characteristics of SiO2 for the ICP. The SiO2 rates and etch selectivities over Si3N4 and amorphous carbon layer (ACL) were measured by using the mixtures of Cx(x = 4, 5, 7)F8/Ar/O2. The higher C/F ratio of perfluorocarbon showed lower SiO2 etch rate but exhibited higher etch selectivities over Si3N4 and ACL due to the higher C2 while keeping the similar F in the plasma as observed by optical emission spectroscopy and due to the thicker fluorocarbon layer with more carbon-rich fluorocarbon on the materials surface as observed by X-ray photoelectron spectroscopy. Especially, C7F8 is environmentally benign material because it not only has a relatively low global warming potential but also can be captured easily using a capture system (a liquid state at the room temperature). Therefore, C7F8 could be applicable as one of the next generation perfluorocarbon etching materials.

In situ catalyzation of carbon nanostructures growth in low-frequency inductively coupled plasmas

2005 ◽  
Vol 33 (2) ◽  
pp. 240-241 ◽  
Author(s):  
J.D. Long ◽  
S. Xu ◽  
S.Y. Huang ◽  
P.P. Rutkevych ◽  
M. Xu ◽  
...  
Keyword(s):  
Carbon Nanostructures ◽  
Low Frequency ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas
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