scholarly journals Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmas

2014 ◽  
Vol 33 (2) ◽  
pp. 021305 ◽  
Author(s):  
Qiaowei Lou ◽  
Sanbir Kaler ◽  
Vincent M. Donnelly ◽  
Demetre J. Economou
Keyword(s):  
Optical Emission ◽  
Spectroscopic Studies ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Observation of Atom and Ion Clouds Produced from Single Droplets of Sample in Inductively Coupled Plasmas by Optical Emission and Laser-Induced Fluorescence Imaging

1997 ◽  
Vol 51 (5) ◽  
pp. 607-616 ◽  
Author(s):  
John W. Olesik ◽  
Jeffery A. Kinzer ◽  
Garrett J. McGowan
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Inductively Coupled Plasmas ◽  
Double Exposure ◽  
Charge Coupled Device ◽  
Inductively Coupled ◽  
Intensified Charge Coupled Device ◽  
Coupled Plasmas ◽  
Single Droplets

An instrument to obtain optical emission and laser-induced fluorescence images of atom or ion clouds, each produced from isolated, monodisperse droplets of sample in an inductively coupled plasma, is described. An excimer laser pumped dye laser is used to produce a large (28-mm × 24-mm) beam for saturated fluorescence from atoms or ions throughout a large portion of the ICP. An intensified charge-coupled device (ICCD) detects optical emission or laser induced fluorescence snapshot images at the focal plane of an aberration-corrected slitless spectrograph. Images produced from a single laser pulse can be detected. Double-exposure emission images with 1-μs gate times can be acquired to monitor the movement of atom or ion clouds produced from a single droplet of sample solution. Variations in the number of atoms or ions produced as a function of time (or height) in the plasma can be monitored. Excitation in the plasma can be assessed from ratios of emission to fluorescence intensities.

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

2020 ◽  
Vol 10 (6) ◽  
pp. 903-908
Author(s):  
Da In Sung ◽  
Hyun Woo Tak ◽  
Dong Woo Kim ◽  
Geun Young Yeom
Keyword(s):  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Carbon Layer ◽  
Environmentally Benign ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
System A ◽  
Coupled Plasmas ◽  
Low Global Warming Potential ◽  
Dry Etch

In this study, the SiO2 etch characteristics of perfluorocarbon such as C4F8, C5F8, and C7F8 were investigated using inductively coupled plasmas (ICPs) to study the effect of a high C/F ratio on the etch characteristics of SiO2 for the ICP. The SiO2 rates and etch selectivities over Si3N4 and amorphous carbon layer (ACL) were measured by using the mixtures of Cx(x = 4, 5, 7)F8/Ar/O2. The higher C/F ratio of perfluorocarbon showed lower SiO2 etch rate but exhibited higher etch selectivities over Si3N4 and ACL due to the higher C2 while keeping the similar F in the plasma as observed by optical emission spectroscopy and due to the thicker fluorocarbon layer with more carbon-rich fluorocarbon on the materials surface as observed by X-ray photoelectron spectroscopy. Especially, C7F8 is environmentally benign material because it not only has a relatively low global warming potential but also can be captured easily using a capture system (a liquid state at the room temperature). Therefore, C7F8 could be applicable as one of the next generation perfluorocarbon etching materials.

Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns

2015 ◽  
Vol 15 (10) ◽  
pp. 8340-8347 ◽  
Author(s):  
Junmyung Lee ◽  
Alexander Efremov ◽  
Geun Young Yeom ◽  
Nomin Lim ◽  
Kwang-Ho Kwon
Keyword(s):  
Fluorine Atom ◽  
Gas Flow ◽  
Optical Emission ◽  
Active Species ◽  
Great Decrease ◽  
Inductively Coupled Plasmas ◽  
Decay Kinetics ◽  
Bias Power ◽  
Inductively Coupled ◽  
Coupled Plasmas

An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0–50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film.

Sign in / Sign up

Export Citation Format

Share Document