Characteristics of sputtered Ti[sub 1−x]Al[sub x]N films for storage node electrode barriers

Author(s):  
Dae-Gyu Park ◽  
Tae-Ho Cha ◽  
Sang-Hyeob Lee ◽  
In-Seok Yeo ◽  
Jin Won Park ◽  
...  
Keyword(s):  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.


2014 ◽  
Vol 662 ◽  
pp. 263-266
Author(s):  
Chun Ping Wang

In this paper, the charging mechanism and content distribution mechanisms of cloud storage for analysis, given reasonable network topology and cost models. Suggestions for improvement heuristic cloud storage static content distribution genetic algorithm is put forward. Full account of the current network bandwidth, edge cloud storage node performance and historical visit value, since the convergence of the proposed probabilistic matching content distribution cloud storage load balancing technology, effectively balancing the load, while reducing the edge server response time.


MRS Bulletin ◽  
1996 ◽  
Vol 21 (7) ◽  
pp. 46-52 ◽  
Author(s):  
A.I. Kingon ◽  
S.K. Streiffer ◽  
C. Basceri ◽  
S.R. Summerfelt

An important application of ferroelectric films is their incorporation into dynamic random-access memories (DRAMs) as the storage node capacitor dielectric. Dynamic random-access memories represent a large market that is experiencing strong growth, but they are particularly significant as the technology leader for semiconductor devices. As products move to higher and higher integration density, new developments are first introduced in DRAMs. The steady trend toward higher density has placed severe demands on the device designs, particularly with respect to “squeezing” the capacitor into the available space.


2014 ◽  
Vol 1046 ◽  
pp. 165-168
Author(s):  
Zhi Bin Luo

On the basis of the pipe network hydraulic calculation of basic theory, the pipe network utilization, using graph theory and peak array build relationships and storage node and pipe sections between the pipeline node associated with the hydraulic parameters of pipe sections linked together establish a common heating pipe network hydraulic calculation models. Matrix for the model were derived solving ideas based on the finite element method and linearization method for existing node equation method to improve to get a new heating network hydraulic calculation methods common to construct a new iterative calculation equation, to improve the convergence of iterative calculation.


2008 ◽  
Vol 103 (7) ◽  
pp. 074503 ◽  
Author(s):  
Atsushi Miura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Shigeo Yoshii ◽  
Ichiro Yamashita
Keyword(s):  

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