Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node

2008 ◽  
Vol 103 (7) ◽  
pp. 074503 ◽  
Author(s):  
Atsushi Miura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Shigeo Yoshii ◽  
Ichiro Yamashita
Keyword(s):  
2012 ◽  
Vol 100 (9) ◽  
pp. 093106 ◽  
Author(s):  
David J. Baek ◽  
Myeong-Lok Seol ◽  
Sung-Jin Choi ◽  
Dong-Il Moon ◽  
Yang-Kyu Choi

Author(s):  
Min-Kyu Jeong ◽  
Ki-Heung Park ◽  
Hyuck-In Kwon ◽  
Sung-Ho Kong ◽  
Jong-Ho Lee

1964 ◽  
Vol 27 (4) ◽  
pp. 293 ◽  
Author(s):  
W.D. Ryan ◽  
H.B. Williams
Keyword(s):  

2003 ◽  
Vol 775 ◽  
Author(s):  
Ivan Stanish ◽  
Daniel A. Lowy ◽  
Alok Singh

AbstractImmobilized polymerized electroactive vesicles (IPEVs) are submicron biocapsules capable of storing charge in confined environments and chemisorbing on surfaces. Methods to immobilize stable submicron sized electroactive vesicles and the means to measure electroactivity of IPEVs at nanolevels have been demonstrated. IPEVs can withstand steep potential gradients applied across their membrane, maintain their structural integrity against surfaces poised at high/low electrical potentials, retain electroactive material over several days, and reversibly mediate (within the membrane) electron flow between the electrode surface and vesicle interior. IPEVs have strong potential to be used for charge storage and electron coupling applications that operate on the submicron scale and smaller.


Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.


2021 ◽  
Vol 411 ◽  
pp. 128416
Author(s):  
S.T. Senthilkumar ◽  
Jeong-Sun Park ◽  
Rebeca Marcilla ◽  
Jesus Palma ◽  
Youngsik Kim

Author(s):  
Sarika Jadhav ◽  
Ramchandra S. Kalubarme ◽  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Bharat Kale ◽  
...  

2021 ◽  
Vol 125 (8) ◽  
pp. 4449-4457
Author(s):  
Jibin J. Samuel ◽  
Varun Kumar Karrothu ◽  
Ram Kumar Canjeevaram Balasubramanyam ◽  
Aiswarya Abhisek Mohapatra ◽  
Chandrasekhar Gangadharappa ◽  
...  

2021 ◽  
Author(s):  
Hemalatha Kuzhandaivel ◽  
Sornalatha Manickam ◽  
Suresh Kannan Balasingam ◽  
Manik Clinton Franklin ◽  
Hee-Je Kim ◽  
...  

Sulfur and nitrogen-doped graphene quantum dots/polyaniline nanocomposites were synthesized and their electrochemical charge storage properties were tested for supercapacitor applications.


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