Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy

1981 ◽  
Vol 38 (12) ◽  
pp. 974-976 ◽  
Author(s):  
J. R. Pawlik ◽  
W. T. Tsang ◽  
F. R. Nash ◽  
R. L. Hartman ◽  
V. Swaminathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Reduced Temperature

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

COMPARISON OF DONOR AND ACCEPTOR LEVELS IN UNDOPED, HIGH QUALITY β-FeSi2 FILMS GROWN BY MBE AND MULTI-LAYER METHOD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4314-4317 ◽  
Author(s):  
K. TAKAKURA ◽  
N. SEKI ◽  
T. SUEMASU ◽  
F. HASEGAWA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Carrier Density ◽  
Molecular Beam ◽  
High Quality ◽  
Layer Method ◽  
Donor And Acceptor ◽  
P Type

The carrier density of highly [100]-oriented β- FeSi 2 films grown by molecular beam epitaxy (MBE) was smaller than that by the multilayer method. For the MBE grown, undoped n- and p-type β- FeSi 2 films, only one donor (E D1 = 0.21 eV) and one acceptor (E A2 = 0.11 eV) levels were obtained from the temperature dependence of the carrier density, in contrast with the fact that two kinds of donor (E D1 = 0.21 eV and E D2 = 0.08 eV) and acceptor (E A1 = 0.19 eV and E A2 = 0.11 eV) levels were obtained for layers grown by multi-layer method. These results suggest that the decrease of the carrier density in the MBE-grown films is due to disappearance of the E D2 or E A1 level.

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