Preferentially Oriented Cubic Boron Nitride Films Grown on Si (001) Substrates by Ion Assisted Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-riba ◽  
G. L. Doll ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTPreferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.

Ion‐assisted pulsed laser deposition of cubic boron nitride films

1994 ◽  
Vol 76 (5) ◽  
pp. 3088-3101 ◽  
Author(s):  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
D. L. Medlin ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Boron Nitride Films

Pulsed laser deposition and modification of cubic boron nitride films

1998 ◽  
Vol 127-129 ◽  
pp. 444-450 ◽  
Author(s):  
S Weissmantel ◽  
G Reisse ◽  
B Keiper ◽  
A Weber ◽  
U Falke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Boron Nitride Films

Electron Microscopy Study of Cubic Boron Nitride Thin Films Grown by Ion -Assisted Pulsed Laser Deposition

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Laser Deposition ◽  
Electron Microscopic ◽  
High Fraction

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.

Microstructure of cubic boron nitride thin films grown by ion‐assisted pulsed laser deposition

1994 ◽  
Vol 76 (1) ◽  
pp. 295-303 ◽  
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
P. Rez ◽  
M. J. Mills ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition

TiN/GaN Metal/Semiconductor Multilayer Nanocomposites Grown by Reactive Pulsed Laser Deposition

2005 ◽  
Vol 872 ◽  
Author(s):  
Vijay Rawat ◽  
Timothy D. Sands
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Grain Sizes ◽  
Transmission Electron ◽  
Free Metal ◽  
Gan Buffer Layer

AbstractTiN/GaN multilayers with periods ranging from 5 nm to 50 nm were grown by reactive pulsed laser deposition (PLD) using elemental metal targets in an ammonia ambient at 20mtorr onto Si(100), MgO(100) and sapphire(0001) substrates. For growth on Si and MgO substrates, an epitaxial 40 nm thick TiN buffer layer was deposited prior to deposition of the multilayers. An epitaxial 150 nm GaN buffer layer was grown on sapphire substrates. For all substrates, layer thicknesses and periods investigated, x-ray diffraction and cross-sectional transmission electron microscopy revealed {0001} texture for GaN, and {111} texture for TiN in the multilayers. Both TiN layers and GaN layers thicker than ∼ 2nm appear to be continuous, with no evidence of agglomeration. Both phases are crystalline, with lateral grain sizes comparable to the layer thickness. These results suggest that epitaxy will not be necessary to fabricate pinhole free metal/semiconductor multilayers in the nitride system.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

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