Low threshold field emission from high-quality cubic boron nitride films

2012 ◽  
Vol 111 (9) ◽  
pp. 093728 ◽  
Author(s):  
Kungen Teii ◽  
Seiichiro Matsumoto
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Cubic Boron Nitride ◽  
Threshold Field ◽  
High Quality ◽  
Low Threshold ◽  
Boron Nitride Films

Deposition of high quality cubic boron nitride films on nickel substrates

1994 ◽  
Vol 65 (8) ◽  
pp. 971-973 ◽  
Author(s):  
Fangqing Zhang ◽  
Yongping Guo ◽  
Zhizhong Song ◽  
Guanghua Chen
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Quality ◽  
Nickel Substrates ◽  
Boron Nitride Films

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

2003 ◽  
Vol 76 (6) ◽  
pp. 953-955 ◽  
Author(s):  
W.J. Zhang ◽  
C.Y. Chan ◽  
K.M. Chan ◽  
I. Bello ◽  
Y. Lifshitz ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Microwave Plasma ◽  
Cubic Boron Nitride ◽  
Plasma Cvd ◽  
Large Area ◽  
High Quality ◽  
Microwave Plasma Cvd ◽  
Boron Nitride Films

Field emission mechanism from nanocrystalline cubic boron nitride films

2004 ◽  
Vol 35 (4) ◽  
pp. 371-374 ◽  
Author(s):  
B. Wang ◽  
R.Z. Wang ◽  
H. Zhou ◽  
X.H. Yan ◽  
J.X. Cao ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Cubic Boron Nitride ◽  
Emission Mechanism ◽  
Boron Nitride Films

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

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