Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Layer structure and composition

A. Raveh; J. Brewer; E. A. Irene

doi:10.1116/1.1333084

Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Layer structure and composition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1333084 ◽

2001 ◽

Vol 19 (1) ◽

pp. 17-24 ◽

Cited By ~ 7

Author(s):

A. Raveh ◽

J. Brewer ◽

E. A. Irene

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Layer Structure ◽

Electron Cyclotron ◽

Radio Frequency Plasma ◽

Sio2 Films ◽

Frequency Plasma

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Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1331295 ◽

2001 ◽

Vol 19 (1) ◽

pp. 9-16 ◽

Cited By ~ 7

Author(s):

A. Raveh ◽

J. Brewer ◽

E. A. Irene

Keyword(s):

Radio Frequency ◽

Process Parameters ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Resonance Effect ◽

Electron Cyclotron ◽

Radio Frequency Plasma ◽

Sio2 Films ◽

Frequency Plasma

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In situ deposition and etching process of a-C:H:N films in a dual electron cyclotron resonance–radio frequency plasma

Diamond and Related Materials ◽

10.1016/s0925-9635(99)00263-0 ◽

2000 ◽

Vol 9 (3-6) ◽

pp. 573-576 ◽

Cited By ~ 22

Author(s):

Junegie Hong ◽

Agnès Granier ◽

Antoine Goullet ◽

Guy Turban

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Etching Process ◽

Radio Frequency Plasma ◽

In Situ Deposition ◽

Frequency Plasma

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Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part II: InP and related compounds

Plasma Chemistry and Plasma Processing ◽

10.1007/bf01447157 ◽

1991 ◽

Vol 11 (4) ◽

pp. 423-438 ◽

Cited By ~ 1

Author(s):

S. J. Pearton ◽

W. S. Hobson ◽

U. K. Chakrabarti ◽

A. Katz ◽

A. P. Perley

Keyword(s):

Radio Frequency ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Radio Frequency Plasma ◽

Frequency Plasma ◽

Related Compounds

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Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds

Plasma Chemistry and Plasma Processing ◽

10.1007/bf01447156 ◽

1991 ◽

Vol 11 (4) ◽

pp. 405-422 ◽

Cited By ~ 9

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. Katz ◽

A. P. Perley ◽

W. S. Hobson ◽

...

Keyword(s):

Radio Frequency ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Radio Frequency Plasma ◽

Frequency Plasma ◽

Related Compounds

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Deposition of amorphous nitrogenated carbon films using an alternate plasma deposition method in a dual electron cyclotron resonance-radio frequency plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581586 ◽

1999 ◽

Vol 17 (1) ◽

pp. 314-316 ◽

Cited By ~ 14

Author(s):

Junegie Hong ◽

Guy Turban

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Deposition ◽

Carbon Films ◽

Electron Cyclotron ◽

Radio Frequency Plasma ◽

Deposition Method ◽

Frequency Plasma ◽

Nitrogenated Carbon

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Resistive Switching Effect in Thermal SiO2 Films Treated in Electron-Cyclotron Resonance Hydrogen Plasma

2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) ◽

10.1109/edm52169.2021.9507691 ◽

2021 ◽

Author(s):

Ramin Iskhakzay ◽

Vitalii Voronkovskii ◽

Vladimir Aliev ◽

Vladimir Gritsenko

Keyword(s):

Resistive Switching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Hydrogen Plasma ◽

Electron Cyclotron ◽

Switching Effect ◽

Sio2 Films ◽

Resistive Switching Effect

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Comparison of electron cyclotron resonance and radio-frequency inductively coupled plasmas of Ar and N2: Neutral kinetic energies and source gas cracking

Journal of Applied Physics ◽

10.1063/1.366916 ◽

1998 ◽

Vol 83 (4) ◽

pp. 1917-1923 ◽

Cited By ~ 6

Author(s):

N. Materer ◽

Rory S. Goodman ◽

Stephen R. Leone

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Inductively Coupled Plasmas ◽

Inductively Coupled ◽

Coupled Plasmas

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Mass spectrometric investigations on plasmas obtained from a dual electron cyclotron resonance-radio frequency discharge

Plasma Sources Science and Technology ◽

10.1088/0963-0252/7/4/018 ◽

1998 ◽

Vol 7 (4) ◽

pp. 607-616 ◽

Cited By ~ 28

Author(s):

M Zarrabian ◽

C Leteinturier ◽

G Turban

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Mass Spectrometric ◽

Electron Cyclotron ◽

Radio Frequency Discharge

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Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Applied Physics Letters ◽

10.1063/1.116071 ◽

1996 ◽

Vol 68 (3) ◽

pp. 316-318 ◽

Cited By ~ 41

Author(s):

Seiji Samukawa

Keyword(s):

Radio Frequency ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Substrate Bias ◽

Pulse Time ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma

Acta Physica Sinica ◽

10.7498/aps.59.1338 ◽

2010 ◽

Vol 59 (2) ◽

pp. 1338

Author(s):

Ke Bo ◽

Wang Lei ◽

Ni Tian-Ling ◽

Ding Fang ◽

Chen Mu-Di ◽

...

Keyword(s):

Radio Frequency ◽

Cyclotron Resonance ◽

Silicon Oxide ◽

Electron Cyclotron Resonance ◽

Oxide Films ◽

Electron Cyclotron ◽

Hybrid Plasma

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