Auger Electron Spectroscopy of Contaminated Gallium-Arsenide Surfaces

1970 ◽  
Vol 7 (1) ◽  
pp. 81-83 ◽  
Author(s):  
John J. Uebbing
Keyword(s):  
Gallium Arsenide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

Auger Electron Spectroscopy of Clean Gallium Arsenide

1970 ◽  
Vol 41 (2) ◽  
pp. 804-808 ◽  
Author(s):  
John J. Uebbing ◽  
Norman J. Taylor
Keyword(s):  
Gallium Arsenide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

Stability of Sulfide Passivated Gallium Arsenide Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
J. S. Solomon ◽  
L. Petry ◽  
S. R. Smith
Keyword(s):  
Gallium Arsenide ◽  
Surface Chemistry ◽  
Auger Electron Spectroscopy ◽  
Barrier Height ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical State ◽  
Ambient Conditions ◽  
Ambient Exposure ◽  
Barrier Heights

ABSTRACTThe chemical state of (NH4)2S treated (100)GaAs surfaces exposed to ambient conditions for several days was correlated with barrier height measurements. Surface chemistry was characterized by Auger electron spectroscopy and barrier heights were calculated from C-V measurements obtained with a Hg probe. Results show that surfaces are chemically and electrically unstable for several hours following the sulfide treatment. The chemical and electrical states continually changed during ambient exposure up to 300 hours. Although strictly speaking, the surfaces were not passivated, the presence of sulfur did inhibit the formation of Ga and As oxides and the incorporation of carbon. In addition, stable, low barrier heights were observed after ambient exposure for several hours. Barrier heights from C-V measurements using deposited Au and Al contacts were compared to the barrier heights obtained with a Hg probe.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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