Fluorine ion implantation profiles in gallium arsenide as determined by Auger electron spectroscopy

1972 ◽  
Vol 21 (12) ◽  
pp. 598-601 ◽  
Author(s):  
J.S. Harris ◽  
J.M. Harris ◽  
H.L. Marcus
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

Zn‐ion‐implantation profiles in CuInSe2by Auger electron spectroscopy

1977 ◽  
Vol 48 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Phil Won Yu ◽  
J. T. Grant ◽  
Y. S. Park ◽  
T. W. Haas
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation

2009 ◽  
Vol 145-146 ◽  
pp. 261-264 ◽  
Author(s):  
Andreas V. Kadavanich ◽  
Sang Hoon Shim ◽  
Harry M. Meyer ◽  
Stephen E. Savas ◽  
Edgar Lara-Curzio
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Mechanical Analysis ◽  
Organic Polymer ◽  
High Dose ◽  
Logic Devices ◽  
The Cross

Photoresist stripping after ion implantation at high dosages (>1E15 atoms/cm2) is the most challenging dry strip process for advanced logic devices. Such high-dose implant stripping (HDIS) frequently leaves residues on the wafers after dry strip, unless fluorine chemistries are employed in the stripping plasma. Silicon loss requirements at sub-45nm nodes generally preclude such aggressive stripping chemistries. Instead, a wet clean is used to remove residues. However, the nature of the residues is not well understood, and are believed to usually contain some of the cross-linked, carbonized organic polymer formed in the implant [1]. In this paper we present chemical and mechanical data on HDIS residues produced from oxidizing and reducing chemistry strip processes.

Auger Electron Spectroscopy of Clean Gallium Arsenide

1970 ◽  
Vol 41 (2) ◽  
pp. 804-808 ◽  
Author(s):  
John J. Uebbing ◽  
Norman J. Taylor
Keyword(s):  
Gallium Arsenide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

Effect of Cr+ Implantation on the Thermal Oxidation of Ta

1983 ◽  
Vol 27 ◽  
Author(s):  
K.S. Grabowski ◽  
C.R. Gossett
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Oxidation Resistance ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Resistance To Oxidation ◽  
Physical Effects ◽  
Local Breakdown

ABSTRACTCr+ implantation of Ta was undertaken in an attempt to improve oxidation resistance at temperatures between 500 and 750°C, and for oxidation times up to l00h. Samples were implanted with 1.5×1017 Cr+/cm2 at 150 keV, and compared to samples implanted with 1×l016 or 1×1017 Ta+/cm2 at 145 keV to evaluate the role of physical effects from ion implantation. Following oxidation, samples were examined using helium and proton backscattering, electron and optical imaging techniques, and auger electron spectroscopy. Improved resistance to oxidation was observed in Cr+-implanted samples oxidized at 500°C for up to l00h, and at 600°C for about lh. However, some local breakdown occurred in these samples and no protection at all was observed at 750°C. Reasons for this breakdown are discussed and alternate approaches for improving oxidation resistance using ion implantation are proposed.

scholarly journals Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2903-2908
Author(s):  
Neelu Shrestha ◽  
Martyn H. Kibel ◽  
Patrick W Leech ◽  
Anthony S Holland ◽  
Geoffrey K Reeves ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Contact Resistance ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Specific Contact Resistance ◽  
Electrical Characteristics ◽  
Specific Contact ◽  
Order Of Magnitude

ABSTRACTThe electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

Stability of Sulfide Passivated Gallium Arsenide Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
J. S. Solomon ◽  
L. Petry ◽  
S. R. Smith
Keyword(s):  
Gallium Arsenide ◽  
Surface Chemistry ◽  
Auger Electron Spectroscopy ◽  
Barrier Height ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical State ◽  
Ambient Conditions ◽  
Ambient Exposure ◽  
Barrier Heights

ABSTRACTThe chemical state of (NH4)2S treated (100)GaAs surfaces exposed to ambient conditions for several days was correlated with barrier height measurements. Surface chemistry was characterized by Auger electron spectroscopy and barrier heights were calculated from C-V measurements obtained with a Hg probe. Results show that surfaces are chemically and electrically unstable for several hours following the sulfide treatment. The chemical and electrical states continually changed during ambient exposure up to 300 hours. Although strictly speaking, the surfaces were not passivated, the presence of sulfur did inhibit the formation of Ga and As oxides and the incorporation of carbon. In addition, stable, low barrier heights were observed after ambient exposure for several hours. Barrier heights from C-V measurements using deposited Au and Al contacts were compared to the barrier heights obtained with a Hg probe.

Auger electron spectroscopy and X-ray diffraction studies of Ti-Si layers synthesised by ion implantation

1990 ◽  
Vol 114 (1-2) ◽  
pp. 93-97 ◽  
Author(s):  
S. V. Vidwans ◽  
A. M. Narsale ◽  
V. P. Salvi ◽  
A. A. Rangwala ◽  
L. Guzman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
X Ray
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