Measurements of Thermal Conductivity of Thin Films by 3-Omega Method

2008 ◽  
Author(s):  
Saburo Tanaka ◽  
Makoto Takiishi ◽  
Koji Miyazaki ◽  
Hiroshi Tsukamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Bismuth Telluride ◽  
Voltage Drop ◽  
Measured Temperature ◽  
Metal Line ◽  
Small Component ◽  
3Ω Method ◽  
Temperature Oscillations

In this study, the thermal conductivity of a bismuth-telluride (Bi2Te3) thin film is measured at room temperature by using the 3ω method [1, 2]. The 3ω method for thin films uses a single metal-line as both the heater and thermometer. An alternating-current driving current at angular frequency ω heats the surface of the sample at a frequency of 2ω. Since the resistance of a metal increases with temperature, temperature oscillations produce an oscillation of the electrical resistance at a frequency of 2ω. Consequently, the voltage drop across the metal line has a small component at 3ω that can be used to measure the temperature oscillations and the thermal response of the sample with a Bismuth-telluride thin film. Differential amplifiers are used to subtract the ω component of the voltage for the measurement of the small 3ω signal as shown in Fig.1. The amplified 3ω component and the attenuated reference voltage are acquired to a personal computer through a 16bit DAC card. The bismuth-telluride thin films are manufactured by flash evaporation and coating. The narrow Aluminum lines for the 3ω method are made by vacuum deposition through metal masks. The measured temperature oscillation ΔT versus ln(ω) yields the thermal conductivity of the substrates. The thermal conductivity of the glass is measured as 0.97 W/(m·K), and that of alumina is 15.4 W/(m·K). These results agree well with the reference data. The thermal conductivities of Bismuth-telluride thin films are calculated from the measured thermal resistances of the films. The measured value for a flash evaporated Bismuth-telluride is 1.20 W/(m·K), and the coated film is 0.51 W/(m·K).

Thermoelectric Micro-Cooler of Bismuth Telluride Thin Films

2007 ◽  
Author(s):  
Koji Miyazaki ◽  
Jun-Ichiro Kurosaki ◽  
Masayuki Takashiri ◽  
Bertrand Lenoir ◽  
Hiroshi Tsukamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Power ◽  
Bismuth Telluride ◽  
Figure Of Merit ◽  
Flash Evaporation ◽  
3Ω Method ◽  
Fine Powders ◽  
P Type

In this study, we fabricated bismuth-telluride thin films and their in-plane thermoelectric micro-coolers (4mm×4mm) by using the flash evaporation method. We prepared fine powders of Bi2.0Te2.7Se0.3 (n-type) and Bi0.4Te3.0Sb1.6 (p-type). The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 to 400°C. By optimizing the annealing temperature, thin films with high thermoelectric power factors of 8.8 μW/(cm·K2) in n-type and 13.8 μW/(cm·K2) in p-type are obtained. To evaluate the figure of merit of the thin film, the thermal conductivity of the n-type thin film is measured by the 3ω method. The thin film annealed at 200 °C exhibited a cross-plane thermal conductivity of 1.2 W/(m·K). Micro-coolers of flash-evaporated bismuth-telluride thin films are fabricated using three shadow masks. The shadow masks are prepared by standard micro-fabrication processes such as nitridation of Si, dry etching, and wet etching. Thermoelectric power of the as-grown thin film devices with 16 pairs of p-n legs are measured by YAG laser heating at the center of the devices. The thermoelectric power of thermoelectric legs is evaluated to be 180μV/K per one p-n leg pair. According to the Kelvin’s law, it corresponds to 54mV Peltier coefficient per p-n pair.

scholarly journals Экспериментальное исследование коэффициента теплопроводности в тонких пленках на основе одностенных углеродных нанотрубок

2020 ◽  
Vol 62 (6) ◽  
pp. 960
Author(s):  
И.А. Тамбасов ◽  
А.С. Воронин ◽  
Н.П. Евсевская ◽  
Ю.М. Кузнецов ◽  
А.В. Лукьяненко ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Carbon Nanotubes ◽  
Thermal Conductivity Coefficient ◽  
Single Walled Carbon Nanotubes ◽  
3Ω Method ◽  
Vacuum Filtration ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Thin films based on single walled carbon nanotubes with a thickness of 11 ± 3 to 157 ± 18 nm were formed using vacuum filtration. The thermal conductivity coefficient in thin films was studied depending on the thickness and temperature up to 450 K using the 3ω method. It was found that, in the region of 49 nm, the supplied heat from the gold strip began to efficiently propagate into the plane of the thin film. The thermal conductivity coefficient for thin films with a thickness of 49 ± 8 nm was measured according to the 3ω method for bulk samples. It was found that the thermal conductivity in thin films based on single walled carbon nanotubes strongly depends on the thickness and temperature. The thermal conductivity increased sharply (~ 60 times) with increasing thickness from 11 ± 3 to 65 ± 4 nm. In addition, it was revealed that the thermal conductivity coefficient for 157 ± 18 nm thin film rapidly decreased from 211 ± 11 to 27.5 ± 1.4 W · m-1 · K-1 for 300 and 450 K, respectively.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

2002 ◽  
Vol 91 (12) ◽  
pp. 9772 ◽  
Author(s):  
Tsuneyuki Yamane ◽  
Naoto Nagai ◽  
Shin-ichiro Katayama ◽  
Minoru Todoki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Silicon Dioxide ◽  
3Ω Method

Temperature Dependence of Thermal Conductivity of Amorphous and Crystal Thin Film by Molecular Dynamics Simulation

2007 ◽  
Author(s):  
Zhengxing Huang ◽  
Zhenan Tang ◽  
Suyuan Bai ◽  
Jun Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Temperature Dependence ◽  
Amorphous Materials ◽  
Dynamics Simulation ◽  
Amorphous Sio2 ◽  
Film Boundary ◽  
Different Temperatures

For crystal materials, thermal conductivity (TC) is proportional to T3 at low temperatures and to T−1 at high temperatures. TCs of most amorphous materials decrease with the decreasing temperatures. If a material is thin film, boundary will influence the TC and then influence the temperature dependence. In this paper, we calculate the TC of crystal and amorphous SiO2 thin films, which is a commonly used material in micro devices and Integrated Circuits, by NEMD simulations. The calculation temperatures are from 100K to 700K and the thicknesses are from 2nm to 8nm. TCs of crystal thin films reach their peak values at different temperatures for different thicknesses. The smaller thickness the larger peak values obtained. But for amorphous thin films, the results show that the temperature dependence of thin films is the same as bulk materials and not relative to their thicknesses. The obtained temperature dependence of the thin films is consistent with some previous measurements and the theory predictions.

Measurement of the Thermal Conductivity and Heat Capacity of Freestanding Shape Memory Thin Films Using the 3ω Method

2008 ◽  
Vol 130 (10) ◽  
Author(s):  
Ankur Jain ◽  
Kenneth E. Goodson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Heat Capacity ◽  
Shape Memory ◽  
Temperature Response ◽  
Thermal Response ◽  
Temperature Phase ◽  
Property Measurement ◽  
Low Temperature Phase

An accurate measurement of the thermophysical properties of freestanding thin films is essential for modeling and predicting thermal performance of microsystems. This paper presents a method for simultaneous measurement of in-plane thermal conductivity and heat capacity of freestanding thin films based on the thermal response to a sinusoidal electric current. An analytical model for the temperature response of a freestanding thin film to a sinusoidal heating current passing through a metal heater patterned on top of the thin film is derived. Freestanding thin-film samples of silicon nitride and nickel titanium (NiTi), a shape memory alloy, are microfabricated and characterized. The thermal conductivity of thin-film NiTi, which increases linearly between 243K and 313K, is 40% lower than the bulk value at room temperature. The heat capacity of NiTi also increases linearly with temperature in the low temperature phase and is nearly constant above 280K. The measurement technique developed in this work is expected to contribute to an accurate thermal property measurement of thin-film materials. Thermophysical measurements on NiTi presented in this work are expected to aid in an accurate thermal modeling of microdevices based on the shape memory effect.

Thermal conductivity of Gd 2 Zr 2 O 7 thin films at various temperatures by using the 3ω method

2017 ◽  
Vol 641 ◽  
pp. 34-37 ◽  
Author(s):  
Ji Hye Kwak ◽  
Jun Gu Kang ◽  
Ho-Soon Yang ◽  
Euh Duck Jeong ◽  
Hyun Gyu Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
3Ω Method
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