Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

2002 ◽  
Vol 91 (12) ◽  
pp. 9772 ◽  
Author(s):  
Tsuneyuki Yamane ◽  
Naoto Nagai ◽  
Shin-ichiro Katayama ◽  
Minoru Todoki
MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.


2017 ◽  
Vol 641 ◽  
pp. 34-37 ◽  
Author(s):  
Ji Hye Kwak ◽  
Jun Gu Kang ◽  
Ho-Soon Yang ◽  
Euh Duck Jeong ◽  
Hyun Gyu Kim ◽  
...  

2020 ◽  
Vol 101 ◽  
pp. 106105 ◽  
Author(s):  
Alexandra Filatova-Zalewska ◽  
Zenon Litwicki ◽  
Tadeusz Suski ◽  
Andrzej Jeżowski

2015 ◽  
Vol 591 ◽  
pp. 267-270 ◽  
Author(s):  
Manuel Bogner ◽  
Alexander Hofer ◽  
Günther Benstetter ◽  
Hermann Gruber ◽  
Richard Y.Q. Fu

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  

AbstractThermoelectric power generation is a promising technology for increasing the efficiency of electrical and optical electrical devices. We prepared samples by Electron Beam evaporating Zn4Sb3 and CeFe2Co2Sb12 thin films on silicon dioxide (silica) substrates. The materials were co-evaporated and then were prepared for gold over-coating. Following electron deposition we performed post ion bombardment at a constant energy of 5 MeV while varying fluence from 1×1012, 1×1013, 1×1014, 1×1015 ions/cm2, respectfully. The production of nano-clusters generated from the MeV Si ions bombardment modifies the electrical and phonon interactions in the materials. Also, we will report on the fluence dependence of the figure of merit, Seebeck Coefficient, thermal conductivity and electrical conductivity. In addition, Rutherford backscattering spectrometry (RBS) was used to analyze the elemental composition and the thickness of the deposited material.


2006 ◽  
Vol 15 (2-3) ◽  
pp. 389-393 ◽  
Author(s):  
Syed Ahmed ◽  
Romy Liske ◽  
Thomas Wunderer ◽  
Michael Leonhardt ◽  
Ronny Ziervogel ◽  
...  

2013 ◽  
Vol 84 (8) ◽  
pp. 084904 ◽  
Author(s):  
Nico Bodenschatz ◽  
André Liemert ◽  
Sebastian Schnurr ◽  
Ulf Wiedwald ◽  
Paul Ziemann

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