CVD Nano-Crystalline Tin Oxide Coatings on Glass Substrate: The Effect of Substrate Temperature

2008 ◽  
Author(s):  
Ramazan Karsliog˘lu ◽  
Hatem Akbulut ◽  
Ahmet Alp
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Deposition Time ◽  
Surface Composition ◽  
Chemical Vapor ◽  
Pure Oxygen ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Different Temperatures

Tin oxide thin films were grown by chemical vapor deposition (CVD) on glass substrates at atmospheric pressure (AP) and different temperatures of 400, 500 and 600 °C. The deposition times were also altered from 15 to 60 minutes with 15 minutes time intervals to investigate the effect of deposition time. A horizontal home-made reactor was used for the deposition from SnCl2 precursors with flowing pure oxygen at a rate 5 ccpm. The structure was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) facilities to reveal the deposition mechanisms and crystalline structures. Energy-dispersive spectroscopy (EDS) was conducted to understand the elemental surface composition of the thin films produced. It was detected that the morphology and the oxide structure were changed with deposition time and temperature. The optical and electrical properties were also studied to reveal a relationship between physical properties and production parameters of the resultant thin films.

Thin Films of Titanium Dioxide Prepared by Chemical Routes using Novel Precursors

2002 ◽  
Vol 755 ◽  
Author(s):  
K. Shalini ◽  
S. Chandrasekaran ◽  
S.A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Film Growth ◽  
Anatase Phase ◽  
Chemical Vapor ◽  
Inert Atmosphere ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTNovel, volatile, stable, oxo-β-ketoesterate complexes of titanium, whose synthesis requires only an inert atmosphere, as opposed to a glove box, have been developed. Using one of the complexes as the precursor, thin films of TiO2 have been deposited on glass substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures ranging from 400°C to 525°C and characterized by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. All the films grown in this temperature range are very smooth; those grown above 480°C consist of nearly monodisperse, nanocrystals of the anatase phase. Optical studies show the bandgaps in the range 3.4–3.7 eV for films grown at different temperatures. Thin films of anatase TiO2 have also been grown by spin-coating technique using another ketoesterate complex of titanium, demonstrating that the newly developed complexes can be successfully used for thin film growth by various chemical routes.

scholarly journals Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (308) ◽  
pp. 192-198 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Different Temperatures

In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

CHARACTERIZATION OF NICKEL OXIDE THIN FILM — DC REACTIVE MAGNETRON SPUTTERING

2011 ◽  
Vol 18 (01n02) ◽  
pp. 11-15 ◽  
Author(s):  
K. ASHOK
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Deposition Time ◽  
Preferred Orientation ◽  
Oxide Thin Film ◽  
Morphological Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nickel oxide ( NiO ) thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering of a Ni target in an Ar / O 2 mixture. The effect of thickness (0.2 μm, 0.4 μm and 1 μm) on the structural and surface morphological properties of NiO thin films was investigated. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The films were cubic NiO , with preferred orientation in the (111) direction at lower deposition time (10 mins). At higher deposition time (60 mins) the preferred orientation shifted to (200) plane. Electrochemical behavior of NiO thin films for different thickness samples were analyzed between the electrode potential ‑0.2 and 0.8 V vs scanning calomel electrode (SCE) in both anodic and cathodic directions and the current responses were measured.

scholarly journals Surface Morphology of Cus Thin Films Observed by Atomic Force Microscopy

2011 ◽  
Vol 16 ◽  
pp. 24 ◽  
Author(s):  
Anuar Kassim ◽  
Ho Soon Min ◽  
Lim Kian Siang ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Deposition Time ◽  
Substrate Surface ◽  
Complexing Agent ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Incomplete Coverage

CuS thin films were deposited onto microscope glass substrates using the chemical bath deposition method in the presence of tartaric acid as a complexing agent. The objective of this paper was to study the influence of the deposition time on the morphology of thin films. The surface morphology of the thin films was investigated using atomic force microscopy. The thin films deposited for the shortest time were found to be   uniform,  without  cracks and with a dense  surface  morphology covering the entire substrate surface area. However, the films prepared for 60 min and above indicated incomplete coverage of the material over the substrate surface. The surface roughness and film thickness values that were observed depended mainly on the deposition time.  

scholarly journals Annealing Effect on the SnSe Nanocrystalline Thin Films and the Photovoltaic Properties of the p-SnSe/n-Si Heterojunction Solar Cells

2021 ◽  
Vol 8 (2) ◽  
pp. 41-49
Author(s):  
Ghuzlan Sarhan Ahmed ◽  
Bushra K. H. Al-Maiyaly ◽  
Seham Hasan Salman ◽  
Rajaa Faisal Rabeea
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Annealing Temperature ◽  
Reverse Bias Voltage ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Different Temperatures ◽  
Hall Effect Measurements

A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100,150,200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS absorption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements. The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature. Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type. The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C). The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.T to 150⁰C, while at 200⁰C, this efficiency was decreased. The measurements of the C-V characteristics displayed that all junctions were abrupt type. It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion width.

Stability of AZO Thin Films under the Environment of Hydrogen Plasma

2011 ◽  
Vol 194-196 ◽  
pp. 2334-2339
Author(s):  
Qing Nan Zhao ◽  
Wen Hui Yuan ◽  
Hong Yu Liang ◽  
Wei Yuan Wang ◽  
Pu Lei Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Treatment Time ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Before And After ◽  
Aluminum Doped Zinc Oxide ◽  
Hall Effect Measurements

The textured thin films of Aluminum-doped zinc oxide (AZO), prepared on glass substrates by magnetron sputtering, were treated under the environment of hydrogen plasma in plasma enhanced chemical vapor deposition (PECVD) chamber for different time. The structure and properties of the thin films before and after the treatment were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis –NIR spectrometer. The results obtained showed that, after the treatment, the crystal structure of the films was not obviously changed, the roughness of the films was reduced, the carrier concentration and Hall mobility of the films increased to a certain saturated level with the treatment time, and the conductivity of the films increased. The transmittance and optical band gap of the AZO films was not affected by plasma treatment.

EFFECT OF REACTION GAS ON THE STRUCTURAL AND OPTICAL FEATURES OF NC-SI:H THIN FILMS PREPARED BY PECVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4335-4338
Author(s):  
J.-H. SHIM ◽  
K.-H. HAN ◽  
M.-B. PARK ◽  
N. H. CHO
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Structural Features ◽  
Nano Structure ◽  
Nano Crystalline ◽  
The Relationship ◽  
Post Deposition

Hydrogenated nano-crystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). The variation in the crystallinity, nano-structure and optical characteristics of the nc-Si:H films with deposition variables such as reaction gas, post-deposition heat-treatment and deposition time were investigated; the relationship between the optical nano-structural features of the nc-Si:H films was discussed. The intensity of the PL peak, observed at about ~ 480 nm region, increased with the amount of reaction gas as well as deposition time. On the other hand, PL peaks appear at ~ 580 nm region when the sample was annealed in vacuum, and the intensity of the peaks increased with increasing the annealing time. It's believed that radiative recombination occurred due to the defects of SiO x in the film.

Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Deposition Time ◽  
Secondary Growth ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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