Analysis and Validation of Sensing Sensitivity of a Piezoresistive Pressure Sensor

2003 ◽  
Author(s):  
Chun-Te Lin ◽  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Experimental Result ◽  
Design Parameters ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Membrane Geometry ◽  
System Output ◽  
Silicon Based ◽  
Sensing Sensitivity ◽  
Selection Of

In this study, a packaged silicon based piezoresistive pressure sensor is designed, fabricated, and studied. A finite element method (FEM) is adopted for designing and optimizing the sensor performance. Thermal as well as pressure loading on the sensor is applied to make a comparison between experimental and simulation results. Furthermore, a method that transfers the simulation stress data into output voltage is proposed in this study, and the results indicate that the experimental result coincides with the simulation data. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include membrane size/shape and the location of piezoresistor. The findings depict that proper selection of the membrane geometry and piezoresistor location can enhance the sensor sensitivity.

Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor

Manufacturing ◽  
2002 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Voltage ◽  
Experimental Validation ◽  
Experimental Result ◽  
Pressure Loading ◽  
Simulation Data ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Stress Buffer

In this study, a packaged silicon base piezoresistive pressure sensor with thermal stress buffer is designed, fabricated, and measured. A finite element method (FEM) is adopted for design and experimental validation of the sensor performance. Thermal and pressure loading on the sensor is applied to make a comparison between sensor experimental and simulation results. Furthermore, a method that transfers simulation stress data into output voltage is proposed in this study, the results indicate that the experimental result coincides with simulation data.

Investigation of Packaging Effect of Silicon-Based Piezoresistive Pressure Sensor

2006 ◽  
Author(s):  
Chen-Hing Chu ◽  
Tsung-Lin Chou ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
High Performance ◽  
Pressure Sensors ◽  
Design Parameters ◽  
Silicone Gel ◽  
Piezoresistive Pressure Sensor ◽  
Signal Sensitivity ◽  
Silicon Based ◽  
Packaging Effect

The silicon-based pressure sensor is one of the major applications in the MEMS device. Nowadays, the silicon piezoresistive pressure sensor is a mature technology in industry and its measurement accuracy is more rigorous in many advanced applications. In order to operate the piezoresistive pressure sensor in harsh environment, the silicone get is usually used to protect the die surface and wire bond while allowing the pressure signal to be transmitted to the silicon diaphragm. The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. Therefore, the thermal and packaging effects caused by the silicone gel behaviors should be taken into consideration to obtain better sensor accuracy and sensitivity. For this reason, a finite element method (FEM) is adopted for the sensor performance evaluation, and the thermal and pressure loading is applied on the sensor to study the output signal sensitivity as well as the packaging-induced signal variation, thermal/packaging effect reduction, and output signal prediction for the pressure sensors. The design parameters include silicon die size, silicone gel geometry and its material properties. The simulation results show that the smaller die size and the thicker die thickness can reduce the packaging-induced thermal effect. Furthermore, the different geometry of silicone gel also influences the sensitivity of pressure sensor.

scholarly journals Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

2021 ◽  
Author(s):  
REKHA DEVI ◽  
Sandeep Singh Gill
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Negative Temperature ◽  
Device Fabrication ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Silicon Based

Abstract In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

Design and Analysis of the CMOS Compatible Pressure Sensor Using Flip Chip and Flex Circuit Board Technologies

2003 ◽  
Author(s):  
Chih-Tang Peng ◽  
Chang-Chun Lee ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Flip Chip ◽  
Circuit Board ◽  
Packaging Design ◽  
System Sensitivity ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Flip Chip Packaging ◽  
Novel Design ◽  
Packaging Effect

In this study, a silicon base piezoresistive pressure sensor using flip chip and flex circuit packaging technologies is studied, designed and analyzed. A novel designed pressure sensor using flip chip packaging with spacer is employed to substitute the conventional chip on board or SOP packaging technology. Subsequently, a finite element method (FEM) is adopted for the designing of the sensor performance. Thermal and pressure loading is applied on the sensor to study the system sensitivity as well as the thermal and packaging effect. The performance of novel packaging pressure sensor is compared with that of the conventional one to demonstrate the feasibility of this novel design. The findings depict that this novel packaging design can not only maintain well sensor sensitivity but also reduce the thermal and packaging effect of the pressure sensor.

A Novel Silicon Base Piezoresistive Pressure Sensor Using Front Side Etching Process

2003 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang ◽  
Jin-Shown Shie
Keyword(s):  
Pressure Sensor ◽  
Thermal Loading ◽  
Fabrication Process ◽  
Back Side ◽  
The Novel ◽  
Front Side ◽  
Sensor Performance ◽  
Novel Structure ◽  
Piezoresistive Pressure Sensor ◽  
Packaging Structure

By applying the etching via technology, this study proposes a novel front-side etching fabrication process for a silicon based piezoresistive pressure sensor to replace the conventional backside bulk micro-machining. The distinguishing features of this novel structure are chip size reduction and fabrication costs degradation. In order to investigate the sensor performance and the sensor packaging effect of the structure proposed in this research, the finite element method was adopted for analyzing the sensor sensitivity and stability. The sensitivity and the stability of the novel sensor after packaging were studied by applying mechanical as well as thermal loading to the sensor. Furthermore, the fabrication process and the sensor performance of the novel pressure sensor were compared with the conventional back-side etching type pressure sensor for the feasibility validation of the novel sensor. The results showed that the novel pressure sensor provides better sensitivity than the conventional one, and the sensor output signal stability can be enhanced by better packaging structure designs proposed in this study. Based on the above findings, this novel structure pressure sensor shows a high potential for membrane type micro-sensor application.

MEMS piezoresistive pressure sensor with patterned thinning of diaphragm

2020 ◽  
Vol 37 (3) ◽  
pp. 147-153
Author(s):  
Zoheir Kordrostami ◽  
Kourosh Hassanli ◽  
Amir Akbarian
Keyword(s):  
Pressure Sensor ◽  
Design Methodology ◽  
Pressure Sensors ◽  
Mems Sensors ◽  
Sensors And Actuators ◽  
Content Type ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Piezoelectric Pressure Sensor ◽  
First Time

Purpose The purpose of this study is to find a new design that can increase the sensitivity of the sensor without sacrificing the linearity. A novel and very efficient method for increasing the sensitivity of MEMS pressure sensor has been proposed for the first time. Rather than perforation, we propose patterned thinning of the diaphragm so that specific regions on it are thinner. This method allows the diaphragm to deflect more in response with regard to the pressure. The best excavation depth has been calculated and a pressure sensor with an optimal pattern for thinned regions has been designed. Compared to the perforated diaphragm with the same pattern, larger output voltage is achieved for the proposed sensor. Unlike the perforations that have to be near the edges of the diaphragm, it is possible for the thin regions to be placed around the center of the diaphragm. This significantly increases the sensitivity of the sensor. In our designation, we have reached a 60 per cent thinning (of the diaphragm area) while perforations larger than 40 per cent degrade the operation of the sensor. The proposed method is applicable to other MEMS sensors and actuators and improves their ultimate performance. Design/methodology/approach Instead of perforating the diaphragm, we propose a patterned thinning scheme which improves the sensor performance. Findings By using thinned regions on the diaphragm rather than perforations, the sensitivity of the sensor was improved. The simulation results show that the proposed design provides larger membrane deflections and higher output voltages compared to the pressure sensors with a normal or perforated diaphragm. Originality/value The proposed MEMS piezoelectric pressure sensor for the first time takes advantage of thinned diaphragm with optimum pattern of thinned regions, larger outputs and larger sensitivity compared with the simple or perforated diaphragm pressure sensors.

Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor

2009 ◽  
Vol 152 (1) ◽  
pp. 29-38 ◽  
Author(s):  
Tsung-Lin Chou ◽  
Chen-Hung Chu ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Sensitivity Analysis ◽  
Pressure Sensor ◽  
Piezoresistive Pressure Sensor ◽  
Silicon Based ◽  
Packaging Effect
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