Investigation of the hysteresis phenomenon of a silicon-based piezoresistive pressure sensor

2007 ◽  
Author(s):  
Hsin-Nan Chiang ◽  
Tsung-Lin Chou ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Hysteresis Phenomenon ◽  
Piezoresistive Pressure Sensor ◽  
Silicon Based

Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor

2009 ◽  
Vol 152 (1) ◽  
pp. 29-38 ◽  
Author(s):  
Tsung-Lin Chou ◽  
Chen-Hung Chu ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Sensitivity Analysis ◽  
Pressure Sensor ◽  
Piezoresistive Pressure Sensor ◽  
Silicon Based ◽  
Packaging Effect

Analysis and Validation of Sensing Sensitivity of a Piezoresistive Pressure Sensor

2003 ◽  
Author(s):  
Chun-Te Lin ◽  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Experimental Result ◽  
Design Parameters ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Membrane Geometry ◽  
System Output ◽  
Silicon Based ◽  
Sensing Sensitivity ◽  
Selection Of

In this study, a packaged silicon based piezoresistive pressure sensor is designed, fabricated, and studied. A finite element method (FEM) is adopted for designing and optimizing the sensor performance. Thermal as well as pressure loading on the sensor is applied to make a comparison between experimental and simulation results. Furthermore, a method that transfers the simulation stress data into output voltage is proposed in this study, and the results indicate that the experimental result coincides with the simulation data. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include membrane size/shape and the location of piezoresistor. The findings depict that proper selection of the membrane geometry and piezoresistor location can enhance the sensor sensitivity.

Investigation of Packaging Effect of Silicon-Based Piezoresistive Pressure Sensor

2006 ◽  
Author(s):  
Chen-Hing Chu ◽  
Tsung-Lin Chou ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
High Performance ◽  
Pressure Sensors ◽  
Design Parameters ◽  
Silicone Gel ◽  
Piezoresistive Pressure Sensor ◽  
Signal Sensitivity ◽  
Silicon Based ◽  
Packaging Effect

The silicon-based pressure sensor is one of the major applications in the MEMS device. Nowadays, the silicon piezoresistive pressure sensor is a mature technology in industry and its measurement accuracy is more rigorous in many advanced applications. In order to operate the piezoresistive pressure sensor in harsh environment, the silicone get is usually used to protect the die surface and wire bond while allowing the pressure signal to be transmitted to the silicon diaphragm. The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. Therefore, the thermal and packaging effects caused by the silicone gel behaviors should be taken into consideration to obtain better sensor accuracy and sensitivity. For this reason, a finite element method (FEM) is adopted for the sensor performance evaluation, and the thermal and pressure loading is applied on the sensor to study the output signal sensitivity as well as the packaging-induced signal variation, thermal/packaging effect reduction, and output signal prediction for the pressure sensors. The design parameters include silicon die size, silicone gel geometry and its material properties. The simulation results show that the smaller die size and the thicker die thickness can reduce the packaging-induced thermal effect. Furthermore, the different geometry of silicone gel also influences the sensitivity of pressure sensor.

scholarly journals Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

2021 ◽  
Author(s):  
REKHA DEVI ◽  
Sandeep Singh Gill
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Negative Temperature ◽  
Device Fabrication ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Silicon Based

Abstract In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

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