Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor

Manufacturing ◽  
2002 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Voltage ◽  
Experimental Validation ◽  
Experimental Result ◽  
Pressure Loading ◽  
Simulation Data ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Stress Buffer

In this study, a packaged silicon base piezoresistive pressure sensor with thermal stress buffer is designed, fabricated, and measured. A finite element method (FEM) is adopted for design and experimental validation of the sensor performance. Thermal and pressure loading on the sensor is applied to make a comparison between sensor experimental and simulation results. Furthermore, a method that transfers simulation stress data into output voltage is proposed in this study, the results indicate that the experimental result coincides with simulation data.

Analysis and Validation of Sensing Sensitivity of a Piezoresistive Pressure Sensor

2003 ◽  
Author(s):  
Chun-Te Lin ◽  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Experimental Result ◽  
Design Parameters ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Membrane Geometry ◽  
System Output ◽  
Silicon Based ◽  
Sensing Sensitivity ◽  
Selection Of

In this study, a packaged silicon based piezoresistive pressure sensor is designed, fabricated, and studied. A finite element method (FEM) is adopted for designing and optimizing the sensor performance. Thermal as well as pressure loading on the sensor is applied to make a comparison between experimental and simulation results. Furthermore, a method that transfers the simulation stress data into output voltage is proposed in this study, and the results indicate that the experimental result coincides with the simulation data. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include membrane size/shape and the location of piezoresistor. The findings depict that proper selection of the membrane geometry and piezoresistor location can enhance the sensor sensitivity.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Design and Analysis of the CMOS Compatible Pressure Sensor Using Flip Chip and Flex Circuit Board Technologies

2003 ◽  
Author(s):  
Chih-Tang Peng ◽  
Chang-Chun Lee ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Flip Chip ◽  
Circuit Board ◽  
Packaging Design ◽  
System Sensitivity ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Flip Chip Packaging ◽  
Novel Design ◽  
Packaging Effect

In this study, a silicon base piezoresistive pressure sensor using flip chip and flex circuit packaging technologies is studied, designed and analyzed. A novel designed pressure sensor using flip chip packaging with spacer is employed to substitute the conventional chip on board or SOP packaging technology. Subsequently, a finite element method (FEM) is adopted for the designing of the sensor performance. Thermal and pressure loading is applied on the sensor to study the system sensitivity as well as the thermal and packaging effect. The performance of novel packaging pressure sensor is compared with that of the conventional one to demonstrate the feasibility of this novel design. The findings depict that this novel packaging design can not only maintain well sensor sensitivity but also reduce the thermal and packaging effect of the pressure sensor.

A Novel Silicon Base Piezoresistive Pressure Sensor Using Front Side Etching Process

2003 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang ◽  
Jin-Shown Shie
Keyword(s):  
Pressure Sensor ◽  
Thermal Loading ◽  
Fabrication Process ◽  
Back Side ◽  
The Novel ◽  
Front Side ◽  
Sensor Performance ◽  
Novel Structure ◽  
Piezoresistive Pressure Sensor ◽  
Packaging Structure

By applying the etching via technology, this study proposes a novel front-side etching fabrication process for a silicon based piezoresistive pressure sensor to replace the conventional backside bulk micro-machining. The distinguishing features of this novel structure are chip size reduction and fabrication costs degradation. In order to investigate the sensor performance and the sensor packaging effect of the structure proposed in this research, the finite element method was adopted for analyzing the sensor sensitivity and stability. The sensitivity and the stability of the novel sensor after packaging were studied by applying mechanical as well as thermal loading to the sensor. Furthermore, the fabrication process and the sensor performance of the novel pressure sensor were compared with the conventional back-side etching type pressure sensor for the feasibility validation of the novel sensor. The results showed that the novel pressure sensor provides better sensitivity than the conventional one, and the sensor output signal stability can be enhanced by better packaging structure designs proposed in this study. Based on the above findings, this novel structure pressure sensor shows a high potential for membrane type micro-sensor application.

MEMS piezoresistive pressure sensor with patterned thinning of diaphragm

2020 ◽  
Vol 37 (3) ◽  
pp. 147-153
Author(s):  
Zoheir Kordrostami ◽  
Kourosh Hassanli ◽  
Amir Akbarian
Keyword(s):  
Pressure Sensor ◽  
Design Methodology ◽  
Pressure Sensors ◽  
Mems Sensors ◽  
Sensors And Actuators ◽  
Content Type ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Piezoelectric Pressure Sensor ◽  
First Time

Purpose The purpose of this study is to find a new design that can increase the sensitivity of the sensor without sacrificing the linearity. A novel and very efficient method for increasing the sensitivity of MEMS pressure sensor has been proposed for the first time. Rather than perforation, we propose patterned thinning of the diaphragm so that specific regions on it are thinner. This method allows the diaphragm to deflect more in response with regard to the pressure. The best excavation depth has been calculated and a pressure sensor with an optimal pattern for thinned regions has been designed. Compared to the perforated diaphragm with the same pattern, larger output voltage is achieved for the proposed sensor. Unlike the perforations that have to be near the edges of the diaphragm, it is possible for the thin regions to be placed around the center of the diaphragm. This significantly increases the sensitivity of the sensor. In our designation, we have reached a 60 per cent thinning (of the diaphragm area) while perforations larger than 40 per cent degrade the operation of the sensor. The proposed method is applicable to other MEMS sensors and actuators and improves their ultimate performance. Design/methodology/approach Instead of perforating the diaphragm, we propose a patterned thinning scheme which improves the sensor performance. Findings By using thinned regions on the diaphragm rather than perforations, the sensitivity of the sensor was improved. The simulation results show that the proposed design provides larger membrane deflections and higher output voltages compared to the pressure sensors with a normal or perforated diaphragm. Originality/value The proposed MEMS piezoelectric pressure sensor for the first time takes advantage of thinned diaphragm with optimum pattern of thinned regions, larger outputs and larger sensitivity compared with the simple or perforated diaphragm pressure sensors.

Design and Simulation of Piezoresistive Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 411-414 ◽  
pp. 1552-1558
Author(s):  
Guan Rong Tang ◽  
Si Di ◽  
Xin Xu ◽  
Qiu Lan Chen
Keyword(s):  
Optimum Design ◽  
Deep Water ◽  
Pressure Sensor ◽  
Measurement Range ◽  
Comsol Multiphysics ◽  
Good Linearity ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Output Characteristics

This paper presents the design and simulation of a piezoresistive pressure sensor with wide operation range (up to the pressure of 1000 m-deep water). Structural and electrical simulations were carried out using COMSOL Multiphysics 4.3. The dimension of the membrane, and the geometry and placement of piezoresistors, were optimized through structural simulations. Electrical simulations were used to evaluate the performance of selected sensors. The output characteristics revealed good linearity throughout the measurement range with sensitivities of 0.4500~0.8964 mV/V/MPa. The optimum design of sensor was determined according to the simulation results.

scholarly journals Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

2021 ◽  
Author(s):  
REKHA DEVI ◽  
Sandeep Singh Gill
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Negative Temperature ◽  
Device Fabrication ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Silicon Based

Abstract In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

scholarly journals Numerical and experimental validation with bifurcation diagrams for a controlled DC–DC converter with quasi-sliding control

TecnoLógicas ◽  
2018 ◽  
Vol 21 (42) ◽  
pp. 147-167 ◽  
Author(s):  
Fredy E. Hoyos ◽  
John E. Candelo-Becerra ◽  
Nicolás Toro
Keyword(s):  
Output Voltage ◽  
Control Parameter ◽  
Experimental Validation ◽  
Chaotic Behavior ◽  
Previous Analysis ◽  
Buck Converter ◽  
Source Voltage ◽  
Simulation Results ◽  
The Stability ◽  
Transient And Steady State

This paper presents a stability analysis of a buck converter using a Zero Average Dynamics (ZAD) controller and Fixed-Point Induction Control (FPIC) when the control parameter 𝑁, the reference voltage υref, and the source voltage 𝐸 are changed. The study was based on a previous analysis in which the control parameter was adjusted to 𝑁=1 and the parameter 𝐾𝑠 was changed during the simulation, finding the stability zone and regions with chaotic behavior. Thus, this new study presents the transient and steady-state behaviors and robustness of the buck converter when the control parameter 𝑁 changes. Moreover, numerical simulation results are compared with experimental observations. The results show that the system regulates the output voltage with low error when the voltage is changed in the source E. Besides, the voltage overshoot increases, and the settling time decreases when the control parameter 𝑁 is augmented and the control parameter 𝐾𝑠 is constant. Furthermore, the buck converter controlled by ZAD and FPIC techniques is effective in regulating the output voltage of the circuit even when there are two delay periods and voltage input disturbances.

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