Assessment of Alpha Emissivity of Packaging Materials and Method to Improve the Measurement Accuracy

Author(s):  
Peng Su ◽  
Rick Wong ◽  
Shi-Jie Wen ◽  
Li Li

Alpha emission from packaging materials is one of the major contributors for soft errors. Because of these materials’ immediate contact or close proximity to active areas of the silicon, even small increase in alpha emissivity may have significant impact on the performance of the device. In this work, we present the analytical steps to identify materials and manufacturing steps that caused high soft error rates for flip chip devices. We will also present some experimental results to highlight the impact of assembly process control. The results from these studies suggest that to minimize the impact of alpha emission from packaging materials, material set selection and assembly process control must be addressed simultaneously to ensure robust device performance.

Methodology ◽  
2007 ◽  
Vol 3 (1) ◽  
pp. 14-23 ◽  
Author(s):  
Juan Ramon Barrada ◽  
Julio Olea ◽  
Vicente Ponsoda

Abstract. The Sympson-Hetter (1985) method provides a means of controlling maximum exposure rate of items in Computerized Adaptive Testing. Through a series of simulations, control parameters are set that mark the probability of administration of an item on being selected. This method presents two main problems: it requires a long computation time for calculating the parameters and the maximum exposure rate is slightly above the fixed limit. Van der Linden (2003) presented two alternatives which appear to solve both of the problems. The impact of these methods in the measurement accuracy has not been tested yet. We show how these methods over-restrict the exposure of some highly discriminating items and, thus, the accuracy is decreased. It also shown that, when the desired maximum exposure rate is near the minimum possible value, these methods offer an empirical maximum exposure rate clearly above the goal. A new method, based on the initial estimation of the probability of administration and the probability of selection of the items with the restricted method ( Revuelta & Ponsoda, 1998 ), is presented in this paper. It can be used with the Sympson-Hetter method and with the two van der Linden's methods. This option, when used with Sympson-Hetter, speeds the convergence of the control parameters without decreasing the accuracy.


Author(s):  
Yoav Weizman ◽  
Ezra Baruch

Abstract In recent years, two new techniques were introduced for flip chip debug; the Laser Voltage Probing (LVP) technique and Time Resolved Light Emission Microscopy (TRLEM). Both techniques utilize the silicon’s relative transparency to wavelengths longer than the band gap. This inherent wavelength limitation, together with the shrinking dimensions of modern CMOS devices, limit the capabilities of these tools. It is known that the optical resolution limits of the LVP and TRLEM techniques are bounded by the diffraction limit which is ~1um for both tools using standard optics. This limitation was reduced with the addition of immersion lens optics. Nevertheless, even with this improvement, shrinking transistor geometry is leading to increased acquisition time, and the overlapping effect between adjacent nodes remains a critical issue. The resolution limit is an order of magnitude above the device feature densities in the < 90nm era. The scaling down of transistor geometry is leading to the inevitable consequence where more than 50% of the transistors in 90nm process have widths smaller than 0.4um. The acquisition time of such nodes becomes unreasonably long. In order to examine nodes in a dense logic cuicuit, cross talk and convolution effects between neighboring signals also need to be considered. In this paper we will demonstrate the impact that these effects may have on modern design. In order to maintain the debug capability, with the currently available analytical tools for future technologies, conceptual modification of the FA process is required. This process should start on the IC design board where the VLSI designer should be familiar with FA constraints, and thus apply features that will enable enhanced FA capabilities to the circuit in hand during the electrical design or during the physical design stages. The necessity for reliable failure analysis in real-time should dictate that the designer of advanced VLSI blocks incorporates failure analysis constraints among other design rules. The purpose of this research is to supply the scientific basis for the optimal incorporation of design rules for optical probing in the < 90nm gate era. Circuit designers are usually familiar with the nodes in the design which are critical for debug, and the type of measurement (logic or DC level) they require. The designer should enable the measurement of these signals by applying certain circuit and physical constraints. The implementation of these constraints may be done at the cell level, the block level or during the integration. We will discuss the solutions, which should be considered in order to mitigate tool limitations, and also to enable their use for next generation processes.


2017 ◽  
Vol 921 (3) ◽  
pp. 7-13 ◽  
Author(s):  
S.V. Grishko

This paper shows that the accuracy of relative satellite measurements depend not only on the length of the baseline, as it is regulated by the rating formula of accuracy of GNSS equipment, but also on the duration of observations. As a result of the strict adjustment much redundant satellite networks with different duration of observations obtained covariance matrix of baselines, the most realistic reflecting the actual error of satellite observations. Research of forms of communication of these errors from length of the baseline and duration of its measurement is executed. A significant influence of solar activity on accuracy of satellite measurements, in general, leads to unequal similar series of measurements made at different periods, for example, in the production of monitoring activities. The model of approximation of the functional dependence of accuracy of the baseline from its length and duration of observations having good qualitative characteristics is offered. Based on the proposed model, we analyzed the dynamics of changes in measurement accuracy with an increase in observation time.


2011 ◽  
Vol 462-463 ◽  
pp. 1194-1199
Author(s):  
Zainudin Kornain ◽  
Azman Jalar ◽  
Rozaidi Rashid ◽  
Shahrum Abdullah

Underfilling is the vital process to reduce the impact of the thermal stress that results from the mismatch in the co-efficient of thermal expansion (CTE) between the silicon chip and the substrate in Flip Chip Packaging. This paper reported the pattern of underfill’s hardness during curing process for large die Ceramic Flip Chip Ball Grid Array (FC-CBGA). A commercial amine based underfill epoxy was dispensed into HiCTE FC-CBGA and cured in curing oven under a new method of two-step curing profile. Nano-identation test was employed to investigate the hardness of underfill epoxy during curing steps. The result has shown the almost similar hardness of fillet area and centre of the package after cured which presented uniformity of curing states. The total curing time/cycle in production was potentially reduced due to no significant different of hardness after 60 min and 120 min during the period of second hold temperature.


2002 ◽  
Vol 7 (5-6) ◽  
pp. 239-243 ◽  
Author(s):  
G. Elger ◽  
M. Hutter ◽  
H. Oppermann ◽  
R. Aschenbrenner ◽  
H. Reichl ◽  
...  
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2000 ◽  
Vol 10 (01) ◽  
pp. 231-245 ◽  
Author(s):  
SANDIP TIWARI ◽  
A. KUMAR ◽  
J. J. WELSER

For transistor, the limit of usable field-effect is defined by tunneling between the source and the drain - the mechanism that competes with field-effect as device dimensions shrink to near deBroglie wavelength. This is a more fundamental constraint in the operation of a field-effect transistor than random dopants, oxide thickness, doping magnitudes and depth, gate resistivity, soft-error rates, etc. We describe here a MOSFET structure, the straddle-gate transistor, that uses inversion regions as virtual source and drain, operates within the limits placed by the other constraints, and operates at acceptable power levels with good power gain and output conductance at 10 nm channel lenth. Experimental behavior of the straddle geometry are also described to summarized the advantages accrued using electron injection from the thin inversion regions.


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