Influence of Surface Pretreatment on the Hydrophobic Silane Coating on AISI 304 Steel

2018 ◽  
Author(s):  
Akinsanya Damilare Baruwa ◽  
Oluseyi Philip Oladijo ◽  
Nthabiseng Maledi ◽  
Esther Titilayo Akinlabi
Keyword(s):  
Silicon Oxide ◽  
Electrochemical Impedance ◽  
Atomic Layer ◽  
Corrosive Media ◽  
Surface Pretreatment ◽  
Bonding Structure ◽  
Atomic Force ◽  
Layer Deposition ◽  
Silane Coating ◽  
Protection Of The Metal

The influence of surface pretreatment on the integrity of Tridecafloro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) coating on the substrate is presented. FOTS is a hydrophobic organic compound deposited on the SS 304 surface to enhance the corrosion protection of the metal. The surface was pretreated with silicon oxide, plasma oxide and both served as adhesions before the coating was deposited on the substrate by atomic layer deposition technique. The coatings were characterized by scanning electron microscope (morphology), atomic force microscope (surface roughness). The chemical composition and bonding structure were obtained by X-ray diffraction (XRD) and Attenuated-Fourier transform infrared (ATR-FTIR). The durability of the coating in corrosive media was investigated through electrochemical polarization and electrochemical impedance spectroscopy (EIS). The results obtained showed that silicon oxide pre-treated steel gave a better stability and improved properties to the coating than the plasma oxide pre-treated surface, and was distinctly discussed.

Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning

2018 ◽  
Vol 36 (2) ◽  
pp. 021509 ◽  
Author(s):  
Meiliang Wang ◽  
Haripin Chandra ◽  
Xinjian Lei ◽  
Anupama Mallikarjunan ◽  
Kirk Cuthill ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Carbon Doped ◽  
Layer Deposition ◽  
Doped Silicon

Various Applications of Multifunctional Thin Films with Specific Properties Deposited by the ALD Method

2019 ◽  
Vol 293 ◽  
pp. 111-123
Author(s):  
Paulina Boryło ◽  
Marek Szindler ◽  
Krzysztof Lukaszkowicz
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Atomic Layer ◽  
Short Circuit Current ◽  
Transparent Conductive Oxide ◽  
Atomic Force ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

This paper presents application examples of atomic layer deposition method (ALD) adopted for production of multifunctional thin films for various usage such as passive, antireflection and transparent conductive films. First part of this paper introduces the mechanism of ALD process, in the rest of it, aluminum oxide (as passive and antireflection) and zinc oxide (as antireflection and transparent conductive) ALD thin films are presented. In the literature one can find reports on the use of the Al2O3 layer as passivating and ZnO layers as a transparent conductive oxide in diodes, polymeric and dye sensitized solar cells. In this article, the ALD layers were tested for their use in silicon solar cells, using their good electrical and optical properties. For examination of prepared thin films characteristics, following research methods were used: scanning electron microscope, atomic force microscope, X-ray diffractometer, ellipsometer, UV/VIS spectrometer and resistance measurements. By depositing a layer thickness of about 80 nm, the short-circuit current on the surface of the solar cell was increased three times while reducing the reflection of light. In turn, by changing the deposition temperature of the ZnO thin film, you can control its electrical properties while maintaining high transparency. The obtained results showed that the ALD method provide the ability to produce a high quality multifunctional thin films with the required properties.

scholarly journals Atomic Layer Deposition of Lithium–Nickel–Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries

Energies ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2345
Author(s):  
Maxim Maximov ◽  
Denis Nazarov ◽  
Aleksander Rumyantsev ◽  
Yury Koshtyal ◽  
Ilya Ezhov ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Atomic Layer Deposition ◽  
Lithium Ion Batteries ◽  
Silicon Oxide ◽  
Lithium Ion ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition ◽  
Nickel Silicon

Lithium nickelate (LiNiO2) and materials based on it are attractive positive electrode materials for lithium-ion batteries, owing to their large capacity. In this paper, the results of atomic layer deposition (ALD) of lithium–nickel–silicon oxide thin films using lithium hexamethyldisilazide (LiHMDS) and bis(cyclopentadienyl) nickel (II) (NiCp2) as precursors and remote oxygen plasma as a counter-reagent are reported. Two approaches were studied: ALD using supercycles and ALD of the multilayered structure of lithium oxide, lithium nickel oxide, and nickel oxides followed by annealing. The prepared films were studied by scanning electron microscopy, spectral ellipsometry, X-ray diffraction, X-ray reflectivity, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction. The pulse ratio of LiHMDS/Ni(Cp)2 precursors in one supercycle ranged from 1/1 to 1/10. Silicon was observed in the deposited films, and after annealing, crystalline Li2SiO3 and Li2Si2O5 were formed at 800 °C. Annealing of the multilayered sample caused the partial formation of LiNiO2. The obtained cathode materials possessed electrochemical activity comparable with the results for other thin-film cathodes.

Designing high performance precursors for atomic layer deposition of silicon oxide

2015 ◽  
Vol 33 (1) ◽  
pp. 01A137 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Haripin Chandra ◽  
Manchao Xiao ◽  
Xinjian Lei ◽  
Ronald M. Pearlstein ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Performance ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

2020 ◽  
Vol 31 (19) ◽  
pp. 195713 ◽  
Author(s):  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko J Heikkilä ◽  
Helena Castán ◽  
Salvador Dueñas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Niobium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Oxide Mixture ◽  
Layer Deposition

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

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